The effects of sub-contact nitrogen doping on silicon carbide photoconductive semiconductor switches

William Sullivan, Cameron Hettler, James Dickens

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Forming non-rectifying (ohmic) contacts to wide band gap semiconductors such as silicon carbide (SiC) requires a heavily doped subsurface layer to reduce the Schottky barrier height and allow efficient electron injection. Nitrogen, a common n-type dopant in SiC, was incorporated into a SiC sample using a laser enhanced diffusion process in which an impurity is incorporated into the semiconductor to very high surface concentrations (> 1020 cm3) and very shallow depths ( 200 nm) with the use of a pulsed 266 nm laser. This paper evaluates the effects of nitrogen introduced through laser enhanced diffusion on the contact formation and the efficiency of silicon carbide photoconductive switches at low and high injection levels under different biasing conditions. Nine lateral switches were fabricated on a high-purity semi-insulating 4H-SiC sample; three with no sub-contact doping, three with sub-contact doping on only one contact, and three with sub-contact doping on both contacts. Results are presented for tests under pulsed laser illumination with sub-contact doping on only the anode, only the cathode, neither, and on both of the contacts.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
Pages77-79
Number of pages3
DOIs
StatePublished - 2012
Event2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 - San Diego, CA, United States
Duration: Jun 3 2012Jun 7 2012

Publication series

NameProceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012

Conference

Conference2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
CountryUnited States
CitySan Diego, CA
Period06/3/1206/7/12

Keywords

  • High voltage
  • Ohmic contact
  • Photoconductive semiconductor switch
  • Silicon carbide

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    Sullivan, W., Hettler, C., & Dickens, J. (2012). The effects of sub-contact nitrogen doping on silicon carbide photoconductive semiconductor switches. In Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 (pp. 77-79). [6518684] (Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012). https://doi.org/10.1109/IPMHVC.2012.6518684