The effect of BCI3 pretreatment on the etching of AIN in C1 2-based plasma

X. Xu; V. Kuryatkov; B. Borisov; M. Pandikunta; S. A. Nikishin; M. Holtz

The effect of BCI₃ pretreatment on the etching of AIN in C1 ₂-based plasma

X. Xu, V. Kuryatkov, B. Borisov, M. Pandikunta, S. A. Nikishin, M. Holtz

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The effect of BCI₃ and BCl₃/Ar pretreatment on Cl₂/Ar and Cl₂/Ar/BCl₃ dry etching of AIN is investigated using inductively coupled plasma reactive ion etching. The native A1N oxide can be effectively removed by a short exposure to BCl₃ or BCl₃/Ar plasma. Compared to the chlorine based plasma etching, BCl₃/Ar is found to have the highest etch rate for both A1N and its native oxide. Following removal of the native oxide, Cl₂/Ar/BCI3 plasma etching with 15% BC13 fraction results in a high etch rate - 87 nm/mm and modest increases in the surface roughness.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices
Pages	181-188
Number of pages	8
State	Published - 2009
Event	Performance and Reliability of Semiconductor Devices - Boston, MA, United States Duration: Nov 30 2008 → Dec 3 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1108
ISSN (Print)	0272-9172

Conference

Conference	Performance and Reliability of Semiconductor Devices
Country	United States
City	Boston, MA
Period	11/30/08 → 12/3/08

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@inproceedings{098862be56e547adb699f3b2002b74f4,

title = "The effect of BCI3 pretreatment on the etching of AIN in C1 2-based plasma",

abstract = "The effect of BCI3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AIN is investigated using inductively coupled plasma reactive ion etching. The native A1N oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both A1N and its native oxide. Following removal of the native oxide, Cl2/Ar/BCI3 plasma etching with 15% BC13 fraction results in a high etch rate - 87 nm/mm and modest increases in the surface roughness.",

author = "X. Xu and V. Kuryatkov and B. Borisov and M. Pandikunta and Nikishin, {S. A.} and M. Holtz",

year = "2009",

language = "English",

isbn = "9781605110806",

series = "Materials Research Society Symposium Proceedings",

pages = "181--188",

booktitle = "Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices",

}

Xu, X, Kuryatkov, V, Borisov, B, Pandikunta, M, Nikishin, SA & Holtz, M 2009, The effect of BCI₃ pretreatment on the etching of AIN in C1 ₂-based plasma. in Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices. Materials Research Society Symposium Proceedings, vol. 1108, pp. 181-188, Performance and Reliability of Semiconductor Devices, Boston, MA, United States, 11/30/08.

The effect of BCI₃ pretreatment on the etching of AIN in C1 ₂-based plasma. / Xu, X.; Kuryatkov, V.; Borisov, B.; Pandikunta, M.; Nikishin, S. A.; Holtz, M.

Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices. 2009. p. 181-188 (Materials Research Society Symposium Proceedings; Vol. 1108).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - The effect of BCI3 pretreatment on the etching of AIN in C1 2-based plasma

AU - Xu, X.

AU - Kuryatkov, V.

AU - Borisov, B.

AU - Pandikunta, M.

AU - Nikishin, S. A.

AU - Holtz, M.

PY - 2009

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N2 - The effect of BCI3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AIN is investigated using inductively coupled plasma reactive ion etching. The native A1N oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both A1N and its native oxide. Following removal of the native oxide, Cl2/Ar/BCI3 plasma etching with 15% BC13 fraction results in a high etch rate - 87 nm/mm and modest increases in the surface roughness.

AB - The effect of BCI3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AIN is investigated using inductively coupled plasma reactive ion etching. The native A1N oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both A1N and its native oxide. Following removal of the native oxide, Cl2/Ar/BCI3 plasma etching with 15% BC13 fraction results in a high etch rate - 87 nm/mm and modest increases in the surface roughness.

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SN - 9781605110806

T3 - Materials Research Society Symposium Proceedings

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BT - Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices

Y2 - 30 November 2008 through 3 December 2008

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