Abstract
The effect of BCI3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AIN is investigated using inductively coupled plasma reactive ion etching. The native A1N oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both A1N and its native oxide. Following removal of the native oxide, Cl2/Ar/BCI3 plasma etching with 15% BC13 fraction results in a high etch rate - 87 nm/mm and modest increases in the surface roughness.
Original language | English |
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Title of host publication | Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices |
Pages | 181-188 |
Number of pages | 8 |
State | Published - 2009 |
Event | Performance and Reliability of Semiconductor Devices - Boston, MA, United States Duration: Nov 30 2008 → Dec 3 2008 |
Publication series
Name | Materials Research Society Symposium Proceedings |
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Volume | 1108 |
ISSN (Print) | 0272-9172 |
Conference
Conference | Performance and Reliability of Semiconductor Devices |
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Country/Territory | United States |
City | Boston, MA |
Period | 11/30/08 → 12/3/08 |