TY - GEN
T1 - The effect of BCI3 pretreatment on the etching of AIN in C1 2-based plasma
AU - Xu, X.
AU - Kuryatkov, V.
AU - Borisov, B.
AU - Pandikunta, M.
AU - Nikishin, S. A.
AU - Holtz, M.
PY - 2009
Y1 - 2009
N2 - The effect of BCI3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AIN is investigated using inductively coupled plasma reactive ion etching. The native A1N oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both A1N and its native oxide. Following removal of the native oxide, Cl2/Ar/BCI3 plasma etching with 15% BC13 fraction results in a high etch rate - 87 nm/mm and modest increases in the surface roughness.
AB - The effect of BCI3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AIN is investigated using inductively coupled plasma reactive ion etching. The native A1N oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both A1N and its native oxide. Following removal of the native oxide, Cl2/Ar/BCI3 plasma etching with 15% BC13 fraction results in a high etch rate - 87 nm/mm and modest increases in the surface roughness.
UR - http://www.scopus.com/inward/record.url?scp=70349266088&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:70349266088
SN - 9781605110806
T3 - Materials Research Society Symposium Proceedings
SP - 181
EP - 188
BT - Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices
T2 - Performance and Reliability of Semiconductor Devices
Y2 - 30 November 2008 through 3 December 2008
ER -