The effect of BCI3 pretreatment on the etching of AIN in C1 2-based plasma

X. Xu, V. Kuryatkov, B. Borisov, M. Pandikunta, S. A. Nikishin, M. Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

The effect of BCI3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AIN is investigated using inductively coupled plasma reactive ion etching. The native A1N oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both A1N and its native oxide. Following removal of the native oxide, Cl2/Ar/BCI3 plasma etching with 15% BC13 fraction results in a high etch rate - 87 nm/mm and modest increases in the surface roughness.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices
Pages181-188
Number of pages8
StatePublished - Sep 25 2009
EventPerformance and Reliability of Semiconductor Devices - Boston, MA, United States
Duration: Nov 30 2008Dec 3 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1108
ISSN (Print)0272-9172

Conference

ConferencePerformance and Reliability of Semiconductor Devices
CountryUnited States
CityBoston, MA
Period11/30/0812/3/08

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Xu, X., Kuryatkov, V., Borisov, B., Pandikunta, M., Nikishin, S. A., & Holtz, M. (2009). The effect of BCI3 pretreatment on the etching of AIN in C1 2-based plasma. In Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices (pp. 181-188). (Materials Research Society Symposium Proceedings; Vol. 1108).