Testing of a low inductance stacked mosfet switch for pulsed ring down sources

D. Reale, J. Mankowski, S. Holt, J. Walter, J. Dickens

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

An inexpensive and mobile array of Pulsed Ring Down Sources (PRDS) were required to verify previous simulation results. Initial attempts to use a stacked MosFET circuit as a closing switch were unsuccessful due to the additional series inductance of the MosFET stack lowering the frequency of the oscillation on the coaxial radiator. Experimental results showed that by reducing the parasitic inductance due to the geometry of the MosFET stack, the frequency of the oscillation could be increased. Increased series resistance due to the stacked MosFETs was also a concern. In order to minimize the parasitic inductance of the stack and allow for multiple stacks to be connected in parallel, a printed circuit board was designed. Results from testing of the original switch stacks and board assembly are presented and compared with PSPICE simulations. Using the simulation results, the reduction in parasitic inductance can be estimated.

Original languageEnglish
Title of host publicationIEEE Conference Record - PPC 2011, Pulsed Power Conference 2011
Subtitle of host publicationThe 18th IEEE International Pulsed Power Conference
Pages1124-1127
Number of pages4
DOIs
StatePublished - 2011
Event18th IEEE International Pulsed Power Conference, PPC 2011 - Chicago, IL, United States
Duration: Jun 19 2011Jun 23 2011

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference18th IEEE International Pulsed Power Conference, PPC 2011
Country/TerritoryUnited States
CityChicago, IL
Period06/19/1106/23/11

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