Temperature-dependent Raman scattering of phonon modes and defect modes in GaN and p-type GaN films

Ruimin Wang; Guangde Chen; J. Y. Lin; H. X. Jang

Temperature-dependent Raman scattering of phonon modes and defect modes in GaN and p-type GaN films

Ruimin Wang, Guangde Chen, J. Y. Lin, H. X. Jang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78K and 573K. A peak at 247 cm^-1 is observed in both Raman spectra of GaN and Mg-doped GaN. It is suggested that the defect-induced scattering is origin of the mode. The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded. Furthermore, the differences of E₂ and A₁ (LO) modes in two samples are also discussed. The stress relaxation is observed in Mg-doped GaN.

Original language	English
Pages (from-to)	635-640
Number of pages	6
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	26
Issue number	4
State	Published - Apr 2005

Keywords

Defect modes
GaN
Raman scattering
p-type GaN

Cite this

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title = "Temperature-dependent Raman scattering of phonon modes and defect modes in GaN and p-type GaN films",

abstract = "Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78K and 573K. A peak at 247 cm-1 is observed in both Raman spectra of GaN and Mg-doped GaN. It is suggested that the defect-induced scattering is origin of the mode. The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded. Furthermore, the differences of E2 and A1 (LO) modes in two samples are also discussed. The stress relaxation is observed in Mg-doped GaN.",

keywords = "Defect modes, GaN, Raman scattering, p-type GaN",

author = "Ruimin Wang and Guangde Chen and Lin, {J. Y.} and Jang, {H. X.}",

year = "2005",

month = apr,

language = "English",

volume = "26",

pages = "635--640",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Temperature-dependent Raman scattering of phonon modes and defect modes in GaN and p-type GaN films

AU - Wang, Ruimin

AU - Chen, Guangde

AU - Lin, J. Y.

AU - Jang, H. X.

PY - 2005/4

Y1 - 2005/4

N2 - Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78K and 573K. A peak at 247 cm-1 is observed in both Raman spectra of GaN and Mg-doped GaN. It is suggested that the defect-induced scattering is origin of the mode. The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded. Furthermore, the differences of E2 and A1 (LO) modes in two samples are also discussed. The stress relaxation is observed in Mg-doped GaN.

AB - Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78K and 573K. A peak at 247 cm-1 is observed in both Raman spectra of GaN and Mg-doped GaN. It is suggested that the defect-induced scattering is origin of the mode. The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded. Furthermore, the differences of E2 and A1 (LO) modes in two samples are also discussed. The stress relaxation is observed in Mg-doped GaN.

KW - Defect modes

KW - GaN

KW - Raman scattering

KW - p-type GaN

UR - http://www.scopus.com/inward/record.url?scp=20144364897&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:20144364897

SN - 0253-4177

VL - 26

SP - 635

EP - 640

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 4

ER -

Temperature-dependent Raman scattering of phonon modes and defect modes in GaN and p-type GaN films

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Keywords

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