Temperature-dependent Raman scattering of phonon modes and defect modes in GaN and p-type GaN films

Ruimin Wang, Guangde Chen, J. Y. Lin, H. X. Jang

Research output: Contribution to journalArticlepeer-review

Abstract

Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78K and 573K. A peak at 247 cm-1 is observed in both Raman spectra of GaN and Mg-doped GaN. It is suggested that the defect-induced scattering is origin of the mode. The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded. Furthermore, the differences of E2 and A1 (LO) modes in two samples are also discussed. The stress relaxation is observed in Mg-doped GaN.

Original languageEnglish
Pages (from-to)635-640
Number of pages6
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume26
Issue number4
StatePublished - Apr 2005

Keywords

  • Defect modes
  • GaN
  • Raman scattering
  • p-type GaN

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