Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD

V. X. Ho; S. P. Dail; T. V. Dao; H. X. Jiang; J. Y. Lin; J. M. Zavada; N. Q. Vinh

doi:10.1557/adv.2017.27

Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD

V. X. Ho, S. P. Dail, T. V. Dao, H. X. Jiang, J. Y. Lin, J. M. Zavada, N. Q. Vinh

Electrical and Computer Engineering

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2 Scopus citations

Abstract

We report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (⁴I_15/2 → ⁴I_9/2) excitation using a Ti:Sapphire laser (λ_exc = 809 nm). High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN have been performed to identify the crystal filed splitting of the first excited state, ⁴I_13/2. Here, we have employed a simple approach to determine activation energies which are related to the thermal population of electrons from the lowest level to the higher level of the crystal field splitting of the first excited state.

Original language	English
Pages (from-to)	135-140
Number of pages	6
Journal	MRS Advances
Volume	2
Issue number	3
DOIs	https://doi.org/10.1557/adv.2017.27
State	Published - 2017

Keywords

Er
optical properties
optoelectronic

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10.1557/adv.2017.27

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title = "Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD",

abstract = "We report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (4I15/2 → 4I9/2) excitation using a Ti:Sapphire laser (λexc = 809 nm). High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN have been performed to identify the crystal filed splitting of the first excited state, 4I13/2. Here, we have employed a simple approach to determine activation energies which are related to the thermal population of electrons from the lowest level to the higher level of the crystal field splitting of the first excited state.",

keywords = "Er, optical properties, optoelectronic",

author = "Ho, {V. X.} and Dail, {S. P.} and Dao, {T. V.} and Jiang, {H. X.} and Lin, {J. Y.} and Zavada, {J. M.} and Vinh, {N. Q.}",

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year = "2017",

doi = "10.1557/adv.2017.27",

language = "English",

volume = "2",

pages = "135--140",

journal = "MRS Advances",

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T1 - Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD

AU - Ho, V. X.

AU - Dail, S. P.

AU - Dao, T. V.

AU - Jiang, H. X.

AU - Lin, J. Y.

AU - Zavada, J. M.

AU - Vinh, N. Q.

PY - 2017

Y1 - 2017

N2 - We report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (4I15/2 → 4I9/2) excitation using a Ti:Sapphire laser (λexc = 809 nm). High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN have been performed to identify the crystal filed splitting of the first excited state, 4I13/2. Here, we have employed a simple approach to determine activation energies which are related to the thermal population of electrons from the lowest level to the higher level of the crystal field splitting of the first excited state.

AB - We report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (4I15/2 → 4I9/2) excitation using a Ti:Sapphire laser (λexc = 809 nm). High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN have been performed to identify the crystal filed splitting of the first excited state, 4I13/2. Here, we have employed a simple approach to determine activation energies which are related to the thermal population of electrons from the lowest level to the higher level of the crystal field splitting of the first excited state.

KW - Er

KW - optical properties

KW - optoelectronic

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DO - 10.1557/adv.2017.27

M3 - Article

AN - SCOPUS:85041590950

SN - 2059-8521

VL - 2

SP - 135

EP - 140

JO - MRS Advances

JF - MRS Advances

IS - 3

ER -

Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD

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