Telecommunication-wavelength lasing in er-doped gan multiple quantum wells at room temperature

V. X. Ho, T. M. Al Tahtamouni, Y. Wang, H. X. Jiang, J. Y. Lin, J. M. Zavada, N. Q. Vinh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectral-linewidth-narrowing, excitation-length.

Original languageEnglish
Title of host publicationAdvanced Solid State Lasers, ASSL 2018
PublisherOSA - The Optical Society
ISBN (Print)9781943580484
DOIs
StatePublished - 2018
EventAdvanced Solid State Lasers, ASSL 2018 - Boston, United States
Duration: Nov 4 2018Nov 8 2018

Publication series

NameOptics InfoBase Conference Papers
VolumePart F121-ASSL 2018

Conference

ConferenceAdvanced Solid State Lasers, ASSL 2018
CountryUnited States
CityBoston
Period11/4/1811/8/18

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