TY - JOUR
T1 - Synthesis of New Nitride Alloys with Mg by Plasma-Assisted Molecular Beam Epitaxy
AU - Gherasoiu, Iulian
AU - Man Yu, Kin
AU - Ekinci, Huseyin
AU - Cui, Bo
AU - Hawkridge, Michael
AU - Kuryatkov, Vladimir
AU - Gaddy, Matthew
AU - Nikishin, Sergey A.
AU - Walukiewicz, Wladek
N1 - Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/9/1
Y1 - 2020/9/1
N2 - A great deal of work is currently devoted to the development of new semiconductor alloys that can expand the range of material properties and device applications. Although group-III nitride alloys are attractive materials owing to the wide range of tunable direct bandgaps and other suitable properties, the material choices are limited to only a few binary and ternary alloys. This situation is due in part to the limitations of the conventional deposition methods, such as chemical vapor deposition, requiring high temperature and high pressure to synthesize a wider range of metastable alloys. In this context, the synthesis of previously unreported quaternary nitride alloys including Mg—(InGaMg)N—is presented. These alloys, with a tunable bandgap and good crystallinity, extend the group of the materials that may be suitable for the fabrication of optoelectronic devices. The method is based on the conventional plasma-assisted molecular beam epitaxy (PA-MBE), using a flux-modulation technique to enable the incorporation of all elements reaching the growth surface. In addition to detailed experimental characterization of structural and optical properties of the Mg containing nitride alloys, computations on their electronic band structures are also carried out.
AB - A great deal of work is currently devoted to the development of new semiconductor alloys that can expand the range of material properties and device applications. Although group-III nitride alloys are attractive materials owing to the wide range of tunable direct bandgaps and other suitable properties, the material choices are limited to only a few binary and ternary alloys. This situation is due in part to the limitations of the conventional deposition methods, such as chemical vapor deposition, requiring high temperature and high pressure to synthesize a wider range of metastable alloys. In this context, the synthesis of previously unreported quaternary nitride alloys including Mg—(InGaMg)N—is presented. These alloys, with a tunable bandgap and good crystallinity, extend the group of the materials that may be suitable for the fabrication of optoelectronic devices. The method is based on the conventional plasma-assisted molecular beam epitaxy (PA-MBE), using a flux-modulation technique to enable the incorporation of all elements reaching the growth surface. In addition to detailed experimental characterization of structural and optical properties of the Mg containing nitride alloys, computations on their electronic band structures are also carried out.
KW - (InGaMg)N
KW - band modeling
KW - nitride alloys
KW - plasma-assisted molecular beam epitaxy
UR - http://www.scopus.com/inward/record.url?scp=85086160645&partnerID=8YFLogxK
U2 - 10.1002/pssb.202000122
DO - 10.1002/pssb.202000122
M3 - Article
AN - SCOPUS:85086160645
VL - 257
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 9
M1 - 2000122
ER -