Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells

Qingwen Wang, Rakib Uddin, Xiaozhang Du, Jing Li, Jingyu Lin, Hongxing Jiang

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Hexagonal boron nitride (h-BN) has emerged as an important extreme bandgap semiconductor as well as a two-dimensional material. Achieving the ability for tuning the optoelectronic properties through alloying and heterojunction will further expand the applications of h-BN. By utilizing h-BN epilayer as a template, the synthesis of BN-rich B 1-x Ga x N alloys and quantum wells crystalized in the hexagonal phase has been demonstrated for the first time by metal organic chemical vapor deposition. The incorporation of Ga tends to enhance the conductivity. A blue shift in the band-edge emission upon the formation of h-BN/BGaN/BN QW has been observed, indicating the feasibility for heterojunction formation.

Original languageEnglish
Article number011002
JournalApplied Physics Express
Volume12
Issue number1
DOIs
StatePublished - Jan 1 2019

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