TY - JOUR
T1 - Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells
AU - Wang, Qingwen
AU - Uddin, Rakib
AU - Du, Xiaozhang
AU - Li, Jing
AU - Lin, Jingyu
AU - Jiang, Hongxing
N1 - Funding Information:
Acknowledgment This work is supported by ARO (W911NF-16-1-0268) and monitored by Dr. Michael Gerhold. The structural characterization efforts were partially supported by NSF (ECCS-1402886). HJ and JL are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre endowed chairs.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Hexagonal boron nitride (h-BN) has emerged as an important extreme bandgap semiconductor as well as a two-dimensional material. Achieving the ability for tuning the optoelectronic properties through alloying and heterojunction will further expand the applications of h-BN. By utilizing h-BN epilayer as a template, the synthesis of BN-rich B 1-x Ga x N alloys and quantum wells crystalized in the hexagonal phase has been demonstrated for the first time by metal organic chemical vapor deposition. The incorporation of Ga tends to enhance the conductivity. A blue shift in the band-edge emission upon the formation of h-BN/BGaN/BN QW has been observed, indicating the feasibility for heterojunction formation.
AB - Hexagonal boron nitride (h-BN) has emerged as an important extreme bandgap semiconductor as well as a two-dimensional material. Achieving the ability for tuning the optoelectronic properties through alloying and heterojunction will further expand the applications of h-BN. By utilizing h-BN epilayer as a template, the synthesis of BN-rich B 1-x Ga x N alloys and quantum wells crystalized in the hexagonal phase has been demonstrated for the first time by metal organic chemical vapor deposition. The incorporation of Ga tends to enhance the conductivity. A blue shift in the band-edge emission upon the formation of h-BN/BGaN/BN QW has been observed, indicating the feasibility for heterojunction formation.
UR - http://www.scopus.com/inward/record.url?scp=85059843777&partnerID=8YFLogxK
U2 - 10.7567/1882-0786/aaee8d
DO - 10.7567/1882-0786/aaee8d
M3 - Article
AN - SCOPUS:85059843777
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 1
M1 - 011002
ER -