Synthesis and optical characterization of erbium-doped III-N double heterostructures

J. M. Zavada, J. Y. Lin, H. X. Jiang, P. Chow, B. Hertog, U. Hömmerich, Ei Ei Nyein, H. A. Jenkinson

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


We report on the first successful synthesis of Er-doped III-N double heterostructures (DHs) grown on sapphire substrates. AlGaN layers, with an Al concentration of ∼12%, were prepared by metalorganic chemical vapor deposition and Er-doped GaN layers by molecular beam epitaxy. The Er concentration was estimated to be ∼1018cm-3. GaN:Er/AlGaN single heterostructures (SHs) and AlGaN/GaN:Er/AlGaN DHs were studied using photoluminescence (PL) spectroscopy. Emission lines characteristic of the GaN:Er system (green: 537 and 558nm, infrared: 1530nm) were observed in all samples. With UV excitation, the infrared PL from the DHs showed a marked improvement compared to the SHs. The PL intensity increased and the spectra showed less defect-related emission. The enhanced PL properties may be due to more effective confinement of electron-hole pairs in the quantum well region.

Original languageEnglish
Pages (from-to)118-121
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
StatePublished - Dec 15 2003
EventEMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic - Strasbourg, Austria
Duration: Jun 10 2003Jun 13 2003


  • AlGaN
  • Double heterostructures
  • Erbium
  • Luminescence
  • Quantum well


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