Synthesis and optical characterization of erbium-doped III-N double heterostructures

J. M. Zavada; J. Y. Lin; H. X. Jiang; P. Chow; B. Hertog; U. Hömmerich; Ei Ei Nyein; H. A. Jenkinson

doi:10.1016/j.mseb.2003.08.028

Synthesis and optical characterization of erbium-doped III-N double heterostructures

J. M. Zavada, J. Y. Lin, H. X. Jiang, P. Chow, B. Hertog, U. Hömmerich, Ei Ei Nyein, H. A. Jenkinson

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We report on the first successful synthesis of Er-doped III-N double heterostructures (DHs) grown on sapphire substrates. AlGaN layers, with an Al concentration of ∼12%, were prepared by metalorganic chemical vapor deposition and Er-doped GaN layers by molecular beam epitaxy. The Er concentration was estimated to be ∼10¹⁸cm^-3. GaN:Er/AlGaN single heterostructures (SHs) and AlGaN/GaN:Er/AlGaN DHs were studied using photoluminescence (PL) spectroscopy. Emission lines characteristic of the GaN:Er system (green: 537 and 558nm, infrared: 1530nm) were observed in all samples. With UV excitation, the infrared PL from the DHs showed a marked improvement compared to the SHs. The PL intensity increased and the spectra showed less defect-related emission. The enhanced PL properties may be due to more effective confinement of electron-hole pairs in the quantum well region.

Original language	English
Pages (from-to)	118-121
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	105
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2003.08.028
State	Published - Dec 15 2003
Event	EMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic - Strasbourg, Austria Duration: Jun 10 2003 → Jun 13 2003

Keywords

AlGaN
Double heterostructures
Erbium
Luminescence
Quantum well

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title = "Synthesis and optical characterization of erbium-doped III-N double heterostructures",

abstract = "We report on the first successful synthesis of Er-doped III-N double heterostructures (DHs) grown on sapphire substrates. AlGaN layers, with an Al concentration of ∼12%, were prepared by metalorganic chemical vapor deposition and Er-doped GaN layers by molecular beam epitaxy. The Er concentration was estimated to be ∼1018cm-3. GaN:Er/AlGaN single heterostructures (SHs) and AlGaN/GaN:Er/AlGaN DHs were studied using photoluminescence (PL) spectroscopy. Emission lines characteristic of the GaN:Er system (green: 537 and 558nm, infrared: 1530nm) were observed in all samples. With UV excitation, the infrared PL from the DHs showed a marked improvement compared to the SHs. The PL intensity increased and the spectra showed less defect-related emission. The enhanced PL properties may be due to more effective confinement of electron-hole pairs in the quantum well region.",

keywords = "AlGaN, Double heterostructures, Erbium, Luminescence, Quantum well",

author = "Zavada, {J. M.} and Lin, {J. Y.} and Jiang, {H. X.} and P. Chow and B. Hertog and U. H{\"o}mmerich and Nyein, {Ei Ei} and Jenkinson, {H. A.}",

year = "2003",

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doi = "10.1016/j.mseb.2003.08.028",

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journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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Synthesis and optical characterization of erbium-doped III-N double heterostructures. / Zavada, J. M.; Lin, J. Y.; Jiang, H. X.; Chow, P.; Hertog, B.; Hömmerich, U.; Nyein, Ei Ei; Jenkinson, H. A.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 105, No. 1-3, 15.12.2003, p. 118-121.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Synthesis and optical characterization of erbium-doped III-N double heterostructures

AU - Zavada, J. M.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Chow, P.

AU - Hertog, B.

AU - Hömmerich, U.

AU - Nyein, Ei Ei

AU - Jenkinson, H. A.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - We report on the first successful synthesis of Er-doped III-N double heterostructures (DHs) grown on sapphire substrates. AlGaN layers, with an Al concentration of ∼12%, were prepared by metalorganic chemical vapor deposition and Er-doped GaN layers by molecular beam epitaxy. The Er concentration was estimated to be ∼1018cm-3. GaN:Er/AlGaN single heterostructures (SHs) and AlGaN/GaN:Er/AlGaN DHs were studied using photoluminescence (PL) spectroscopy. Emission lines characteristic of the GaN:Er system (green: 537 and 558nm, infrared: 1530nm) were observed in all samples. With UV excitation, the infrared PL from the DHs showed a marked improvement compared to the SHs. The PL intensity increased and the spectra showed less defect-related emission. The enhanced PL properties may be due to more effective confinement of electron-hole pairs in the quantum well region.

AB - We report on the first successful synthesis of Er-doped III-N double heterostructures (DHs) grown on sapphire substrates. AlGaN layers, with an Al concentration of ∼12%, were prepared by metalorganic chemical vapor deposition and Er-doped GaN layers by molecular beam epitaxy. The Er concentration was estimated to be ∼1018cm-3. GaN:Er/AlGaN single heterostructures (SHs) and AlGaN/GaN:Er/AlGaN DHs were studied using photoluminescence (PL) spectroscopy. Emission lines characteristic of the GaN:Er system (green: 537 and 558nm, infrared: 1530nm) were observed in all samples. With UV excitation, the infrared PL from the DHs showed a marked improvement compared to the SHs. The PL intensity increased and the spectra showed less defect-related emission. The enhanced PL properties may be due to more effective confinement of electron-hole pairs in the quantum well region.

KW - AlGaN

KW - Double heterostructures

KW - Erbium

KW - Luminescence

KW - Quantum well

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