Synthesis and compression of nanocrystalline silicon carbide

Hongyang Zhu; Yanzhang Ma; Haibin Yang; Emre Selvi; Dongbin Hou; Cheng Ji

doi:10.1063/1.3043846

Synthesis and compression of nanocrystalline silicon carbide

Hongyang Zhu, Yanzhang Ma, Haibin Yang, Emre Selvi, Dongbin Hou, Cheng Ji

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Nanocrystalline silicon carbide (SiC) with a diameter of 7 nm was synthesized in a high voltage electrical explosion. It has a larger lattice parameter (0.1%) than its bulk material. Synchrotron x-ray diffraction measurements of nanocrystalline SiC were carried out to 15.8 GPa. The bulk modulus was determined to be K_0T =201±10 GPa, which is substantially smaller than those of bulk material and nanocrystalline with large grain sizes. It is considered to be caused by the weaker atomic bonding strength and the imperfections of the nanocrystalline SiC.

Original language	English
Article number	123516
Journal	Journal of Applied Physics
Volume	104
Issue number	12
DOIs	https://doi.org/10.1063/1.3043846
State	Published - 2008

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@article{c8bba8a61c184be69fb56a9d40364350,

title = "Synthesis and compression of nanocrystalline silicon carbide",

abstract = "Nanocrystalline silicon carbide (SiC) with a diameter of 7 nm was synthesized in a high voltage electrical explosion. It has a larger lattice parameter (0.1%) than its bulk material. Synchrotron x-ray diffraction measurements of nanocrystalline SiC were carried out to 15.8 GPa. The bulk modulus was determined to be K0T =201±10 GPa, which is substantially smaller than those of bulk material and nanocrystalline with large grain sizes. It is considered to be caused by the weaker atomic bonding strength and the imperfections of the nanocrystalline SiC.",

author = "Hongyang Zhu and Yanzhang Ma and Haibin Yang and Emre Selvi and Dongbin Hou and Cheng Ji",

note = "Funding Information: We thank Jingzhu Hu and Quanzhong Guo for their technical support with the synchrotron x-ray diffraction measurements at Brookhaven National Laboratory and Boheng Ma and Trevor Hannon for proofreading the manuscript. This work is supported by the Department of Energy (DOE) under Agreement No. DEFC03-03NA00144 and the National Science Foundation (NSF) Grant No. DMR-0619215.",

year = "2008",

doi = "10.1063/1.3043846",

language = "English",

volume = "104",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "12",

}

TY - JOUR

T1 - Synthesis and compression of nanocrystalline silicon carbide

AU - Zhu, Hongyang

AU - Ma, Yanzhang

AU - Yang, Haibin

AU - Selvi, Emre

AU - Hou, Dongbin

AU - Ji, Cheng

N1 - Funding Information: We thank Jingzhu Hu and Quanzhong Guo for their technical support with the synchrotron x-ray diffraction measurements at Brookhaven National Laboratory and Boheng Ma and Trevor Hannon for proofreading the manuscript. This work is supported by the Department of Energy (DOE) under Agreement No. DEFC03-03NA00144 and the National Science Foundation (NSF) Grant No. DMR-0619215.

PY - 2008

Y1 - 2008

N2 - Nanocrystalline silicon carbide (SiC) with a diameter of 7 nm was synthesized in a high voltage electrical explosion. It has a larger lattice parameter (0.1%) than its bulk material. Synchrotron x-ray diffraction measurements of nanocrystalline SiC were carried out to 15.8 GPa. The bulk modulus was determined to be K0T =201±10 GPa, which is substantially smaller than those of bulk material and nanocrystalline with large grain sizes. It is considered to be caused by the weaker atomic bonding strength and the imperfections of the nanocrystalline SiC.

AB - Nanocrystalline silicon carbide (SiC) with a diameter of 7 nm was synthesized in a high voltage electrical explosion. It has a larger lattice parameter (0.1%) than its bulk material. Synchrotron x-ray diffraction measurements of nanocrystalline SiC were carried out to 15.8 GPa. The bulk modulus was determined to be K0T =201±10 GPa, which is substantially smaller than those of bulk material and nanocrystalline with large grain sizes. It is considered to be caused by the weaker atomic bonding strength and the imperfections of the nanocrystalline SiC.

UR - http://www.scopus.com/inward/record.url?scp=58149267518&partnerID=8YFLogxK

U2 - 10.1063/1.3043846

DO - 10.1063/1.3043846

M3 - Article

AN - SCOPUS:58149267518

SN - 0021-8979

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123516

ER -

Synthesis and compression of nanocrystalline silicon carbide

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