Single phase AlMnN has been grown by gas source molecular beam epitaxy using solid Al and Mn and RF plasma for the nitrogen, AlN and AlGaN (both n- and p-type) layers have been implanted with Mn, Cr, and Co ions at high doses followed by annealing for activation. SQUID magnetometry indicated room temperature hysteresis in the epi AlMnN, however no evidence of 300K hysteresis was found for the Mn-implanted AlN. This behavior indicates an influence of defects and impurity-type on magnetic ordering. In the n-AlGaN, room temperature ferromagnetism was observed in the Co-implanted material but not in Cr- or Mn-implanted n-AlGaN. By sharp contrast, 300K hysteresis was seen in the Mn-implanted p-AlGaN, suggesting the carrier type influences the magnetic behavior.
|Number of pages||6|
|State||Published - 2003|
|Event||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States|
Duration: Oct 12 2003 → Oct 17 2003
|Conference||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium|
|Period||10/12/03 → 10/17/03|