Synthesis and characterization of ferromagnetic AIN and AlGaN layers

R. M. Frazier; G. T. Thaler; C. R. Abernathy; S. J. Pearton; M. L. Nakarmi; J. Y. Lin; H. X. Jiang; R. Rairigh; J. Kelly; A. F. Hebard; J. M. Zavada; R. G. Wilson

Synthesis and characterization of ferromagnetic AIN and AlGaN layers

R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, R. Rairigh, J. Kelly, A. F. Hebard, J. M. Zavada, R. G. Wilson

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Single phase AlMnN has been grown by gas source molecular beam epitaxy using solid Al and Mn and RF plasma for the nitrogen, AlN and AlGaN (both n- and p-type) layers have been implanted with Mn, Cr, and Co ions at high doses followed by annealing for activation. SQUID magnetometry indicated room temperature hysteresis in the epi AlMnN, however no evidence of 300K hysteresis was found for the Mn-implanted AlN. This behavior indicates an influence of defects and impurity-type on magnetic ordering. In the n-AlGaN, room temperature ferromagnetism was observed in the Co-implanted material but not in Cr- or Mn-implanted n-AlGaN. By sharp contrast, 300K hysteresis was seen in the Mn-implanted p-AlGaN, suggesting the carrier type influences the magnetic behavior.

Original language	English
Pages	384-389
Number of pages	6
State	Published - 2003
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: Oct 12 2003 → Oct 17 2003

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	10/12/03 → 10/17/03

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Frazier, R. M., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X., Rairigh, R., Kelly, J., Hebard, A. F., Zavada, J. M., & Wilson, R. G. (2003). Synthesis and characterization of ferromagnetic AIN and AlGaN layers. 384-389. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

@conference{1ac6b680caff43c195d8feb19d63e0a2,

title = "Synthesis and characterization of ferromagnetic AIN and AlGaN layers",

abstract = "Single phase AlMnN has been grown by gas source molecular beam epitaxy using solid Al and Mn and RF plasma for the nitrogen, AlN and AlGaN (both n- and p-type) layers have been implanted with Mn, Cr, and Co ions at high doses followed by annealing for activation. SQUID magnetometry indicated room temperature hysteresis in the epi AlMnN, however no evidence of 300K hysteresis was found for the Mn-implanted AlN. This behavior indicates an influence of defects and impurity-type on magnetic ordering. In the n-AlGaN, room temperature ferromagnetism was observed in the Co-implanted material but not in Cr- or Mn-implanted n-AlGaN. By sharp contrast, 300K hysteresis was seen in the Mn-implanted p-AlGaN, suggesting the carrier type influences the magnetic behavior.",

author = "Frazier, {R. M.} and Thaler, {G. T.} and Abernathy, {C. R.} and Pearton, {S. J.} and Nakarmi, {M. L.} and Lin, {J. Y.} and Jiang, {H. X.} and R. Rairigh and J. Kelly and Hebard, {A. F.} and Zavada, {J. M.} and Wilson, {R. G.}",

year = "2003",

language = "English",

pages = "384--389",

note = "State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Frazier, RM, Thaler, GT, Abernathy, CR, Pearton, SJ, Nakarmi, ML, Lin, JY , Jiang, HX, Rairigh, R, Kelly, J, Hebard, AF, Zavada, JM & Wilson, RG 2003, 'Synthesis and characterization of ferromagnetic AIN and AlGaN layers', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 10/12/03 - 10/17/03 pp. 384-389.

Synthesis and characterization of ferromagnetic AIN and AlGaN layers. / Frazier, R. M.; Thaler, G. T.; Abernathy, C. R. et al.
2003. 384-389 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Synthesis and characterization of ferromagnetic AIN and AlGaN layers

AU - Frazier, R. M.

AU - Thaler, G. T.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Nakarmi, M. L.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Rairigh, R.

AU - Kelly, J.

AU - Hebard, A. F.

AU - Zavada, J. M.

AU - Wilson, R. G.

PY - 2003

Y1 - 2003

N2 - Single phase AlMnN has been grown by gas source molecular beam epitaxy using solid Al and Mn and RF plasma for the nitrogen, AlN and AlGaN (both n- and p-type) layers have been implanted with Mn, Cr, and Co ions at high doses followed by annealing for activation. SQUID magnetometry indicated room temperature hysteresis in the epi AlMnN, however no evidence of 300K hysteresis was found for the Mn-implanted AlN. This behavior indicates an influence of defects and impurity-type on magnetic ordering. In the n-AlGaN, room temperature ferromagnetism was observed in the Co-implanted material but not in Cr- or Mn-implanted n-AlGaN. By sharp contrast, 300K hysteresis was seen in the Mn-implanted p-AlGaN, suggesting the carrier type influences the magnetic behavior.

AB - Single phase AlMnN has been grown by gas source molecular beam epitaxy using solid Al and Mn and RF plasma for the nitrogen, AlN and AlGaN (both n- and p-type) layers have been implanted with Mn, Cr, and Co ions at high doses followed by annealing for activation. SQUID magnetometry indicated room temperature hysteresis in the epi AlMnN, however no evidence of 300K hysteresis was found for the Mn-implanted AlN. This behavior indicates an influence of defects and impurity-type on magnetic ordering. In the n-AlGaN, room temperature ferromagnetism was observed in the Co-implanted material but not in Cr- or Mn-implanted n-AlGaN. By sharp contrast, 300K hysteresis was seen in the Mn-implanted p-AlGaN, suggesting the carrier type influences the magnetic behavior.

UR - http://www.scopus.com/inward/record.url?scp=6344276690&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:6344276690

SP - 384

EP - 389

T2 - State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Nakarmi ML, Lin JY et al.. Synthesis and characterization of ferromagnetic AIN and AlGaN layers. 2003. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Synthesis and characterization of ferromagnetic AIN and AlGaN layers

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