Symmetry determination of the EL2 defect by numerical fitting of capacitance transients under uniaxial stress

S. Yang, C. D. Lamp

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The symmetry of the EL2 center in n-type liquid-encapsulated Czochralski GaAs is investigated through numerical fitting of capacitance transients measured under uniaxial stress. From experimental data which superficially appears compatible with Td symmetry, we extract reproducible defect energy-level splitting under uniaxial stress and conclude that EL2 has C3v symmetry, supporting the AsGa-Asi pair model with Asi weakly bound to AsGa.

Original languageEnglish
Pages (from-to)1690-1695
Number of pages6
JournalPhysical Review B
Volume49
Issue number3
DOIs
StatePublished - 1994

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