Surface chemical and electronic properties of plasma-treated n-type Al 0.5Ga 0.5N

X. A. Cao, H. Piao, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

The effects of plasma treatment on the surface properties of Si-doped Al 0.5Ga 0.5N were studied by X-ray photoelectron spectroscopy and metal contact measurements. Plasma treatment resulted in a N-deficient nonstoichiometric AlGaN surface with an increased O concentration and large red shifts of photoelectron peaks. The red shifts remained after removal of the surface oxide, indicating a downward shift of the surface Fermi level as a result of ion-induced compensating defects. Pre-metel plasma treatment led to more rectifying electrical characteristics of Ti/Al/Ti/Au contacts. Current-voltage characterization at elevated temperatures revealed strong compensating effects of the plasma damage in Al 0.5Ga 0.5N even at 300°C.

Original languageEnglish
Pages (from-to)3410-3416
Number of pages7
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume204
Issue number10
DOIs
StatePublished - Oct 2007

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