Surface chemical and electronic properties of plasma-treated n-type Al 0.5Ga 0.5N

X. A. Cao; H. Piao; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1002/pssa.200723119

Surface chemical and electronic properties of plasma-treated n-type Al _0.5Ga _0.5N

X. A. Cao, H. Piao, J. Li, J. Y. Lin, H. X. Jiang

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19 Scopus citations

Abstract

The effects of plasma treatment on the surface properties of Si-doped Al _0.5Ga _0.5N were studied by X-ray photoelectron spectroscopy and metal contact measurements. Plasma treatment resulted in a N-deficient nonstoichiometric AlGaN surface with an increased O concentration and large red shifts of photoelectron peaks. The red shifts remained after removal of the surface oxide, indicating a downward shift of the surface Fermi level as a result of ion-induced compensating defects. Pre-metel plasma treatment led to more rectifying electrical characteristics of Ti/Al/Ti/Au contacts. Current-voltage characterization at elevated temperatures revealed strong compensating effects of the plasma damage in Al _0.5Ga _0.5N even at 300°C.

Original language	English
Pages (from-to)	3410-3416
Number of pages	7
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	10
DOIs	https://doi.org/10.1002/pssa.200723119
State	Published - Oct 2007

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title = "Surface chemical and electronic properties of plasma-treated n-type Al 0.5Ga 0.5N",

abstract = "The effects of plasma treatment on the surface properties of Si-doped Al 0.5Ga 0.5N were studied by X-ray photoelectron spectroscopy and metal contact measurements. Plasma treatment resulted in a N-deficient nonstoichiometric AlGaN surface with an increased O concentration and large red shifts of photoelectron peaks. The red shifts remained after removal of the surface oxide, indicating a downward shift of the surface Fermi level as a result of ion-induced compensating defects. Pre-metel plasma treatment led to more rectifying electrical characteristics of Ti/Al/Ti/Au contacts. Current-voltage characterization at elevated temperatures revealed strong compensating effects of the plasma damage in Al 0.5Ga 0.5N even at 300°C.",

author = "Cao, {X. A.} and H. Piao and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

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T1 - Surface chemical and electronic properties of plasma-treated n-type Al 0.5Ga 0.5N

AU - Cao, X. A.

AU - Piao, H.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2007/10

Y1 - 2007/10

N2 - The effects of plasma treatment on the surface properties of Si-doped Al 0.5Ga 0.5N were studied by X-ray photoelectron spectroscopy and metal contact measurements. Plasma treatment resulted in a N-deficient nonstoichiometric AlGaN surface with an increased O concentration and large red shifts of photoelectron peaks. The red shifts remained after removal of the surface oxide, indicating a downward shift of the surface Fermi level as a result of ion-induced compensating defects. Pre-metel plasma treatment led to more rectifying electrical characteristics of Ti/Al/Ti/Au contacts. Current-voltage characterization at elevated temperatures revealed strong compensating effects of the plasma damage in Al 0.5Ga 0.5N even at 300°C.

AB - The effects of plasma treatment on the surface properties of Si-doped Al 0.5Ga 0.5N were studied by X-ray photoelectron spectroscopy and metal contact measurements. Plasma treatment resulted in a N-deficient nonstoichiometric AlGaN surface with an increased O concentration and large red shifts of photoelectron peaks. The red shifts remained after removal of the surface oxide, indicating a downward shift of the surface Fermi level as a result of ion-induced compensating defects. Pre-metel plasma treatment led to more rectifying electrical characteristics of Ti/Al/Ti/Au contacts. Current-voltage characterization at elevated temperatures revealed strong compensating effects of the plasma damage in Al 0.5Ga 0.5N even at 300°C.

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ER -

Surface chemical and electronic properties of plasma-treated n-type Al _0.5Ga _0.5N

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