Supralinear photoconductivity of copper-doped gallium arsenide

Karl H. Schoenbach, Ravindra P. Joshi, Frank E. Peterkin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. Numerical simulations have also been carried out to analyze the effect. The intensity dependent lifetimes obtained from the simulations match the experiments very well. Such a nonlinear intensity dependence could have possible low-energy phototransistor applications.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsWilliam R. Donaldson
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages50-59
Number of pages10
ISBN (Print)0819416762
StatePublished - 1995
EventOptically Activated Switching IV - Boston, MA, USA
Duration: Oct 31 1994Nov 1 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2343
ISSN (Print)0277-786X

Conference

ConferenceOptically Activated Switching IV
CityBoston, MA, USA
Period10/31/9411/1/94

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