Supralinear photoconductivity of copper-doped gallium arsenide

Karl H. Schoenbach; Ravindra P. Joshi; Frank E. Peterkin

Supralinear photoconductivity of copper-doped gallium arsenide

Karl H. Schoenbach, Ravindra P. Joshi, Frank E. Peterkin

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. Numerical simulations have also been carried out to analyze the effect. The intensity dependent lifetimes obtained from the simulations match the experiments very well. Such a nonlinear intensity dependence could have possible low-energy phototransistor applications.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	William R. Donaldson
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	50-59
Number of pages	10
ISBN (Print)	0819416762
State	Published - 1995
Event	Optically Activated Switching IV - Boston, MA, USA Duration: Oct 31 1994 → Nov 1 1994

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2343
ISSN (Print)	0277-786X

Conference

Conference	Optically Activated Switching IV
City	Boston, MA, USA
Period	10/31/94 → 11/1/94

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Schoenbach, K. H., Joshi, R. P., & Peterkin, F. E. (1995). Supralinear photoconductivity of copper-doped gallium arsenide. In W. R. Donaldson (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 50-59). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2343). Society of Photo-Optical Instrumentation Engineers.

Schoenbach, Karl H. ; Joshi, Ravindra P. ; Peterkin, Frank E. / Supralinear photoconductivity of copper-doped gallium arsenide. Proceedings of SPIE - The International Society for Optical Engineering. editor / William R. Donaldson. Society of Photo-Optical Instrumentation Engineers, 1995. pp. 50-59 (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Supralinear photoconductivity of copper-doped gallium arsenide",

abstract = "We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. Numerical simulations have also been carried out to analyze the effect. The intensity dependent lifetimes obtained from the simulations match the experiments very well. Such a nonlinear intensity dependence could have possible low-energy phototransistor applications.",

author = "Schoenbach, {Karl H.} and Joshi, {Ravindra P.} and Peterkin, {Frank E.}",

year = "1995",

language = "English",

isbn = "0819416762",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

pages = "50--59",

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booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

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Schoenbach, KH, Joshi, RP & Peterkin, FE 1995, Supralinear photoconductivity of copper-doped gallium arsenide. in WR Donaldson (ed.), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2343, Society of Photo-Optical Instrumentation Engineers, pp. 50-59, Optically Activated Switching IV, Boston, MA, USA, 10/31/94.

Supralinear photoconductivity of copper-doped gallium arsenide. / Schoenbach, Karl H.; Joshi, Ravindra P.; Peterkin, Frank E.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / William R. Donaldson. Society of Photo-Optical Instrumentation Engineers, 1995. p. 50-59 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2343).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. Numerical simulations have also been carried out to analyze the effect. The intensity dependent lifetimes obtained from the simulations match the experiments very well. Such a nonlinear intensity dependence could have possible low-energy phototransistor applications.

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BT - Proceedings of SPIE - The International Society for Optical Engineering

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