Supercritical carbon dioxide extraction to produce low-k plasma enhanced chemical vapor deposited dielectric films

J. A. Lubguban; J. Sun; T. Rajagopalan; B. Lahlouh; S. L. Simon; S. Gangopadhyay

doi:10.1063/1.1525390

Supercritical carbon dioxide extraction to produce low-k plasma enhanced chemical vapor deposited dielectric films

J. A. Lubguban, J. Sun, T. Rajagopalan, B. Lahlouh, S. L. Simon, S. Gangopadhyay

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The dielectric constant of plasma enhanced chemical vapor deposition (PECVD) films was reduced. As-deposited films were also annealed at 200 °C for 8 h in nitrogen atmosphere to compare the effect of thermal annealing without supercritical carbon dioxide (SCCO2). The results showed that the extraction creates molecular or nanoscale porosity thereby reducing dielectric constant.

Original language	English
Pages (from-to)	4407-4409
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	23
DOIs	https://doi.org/10.1063/1.1525390
State	Published - Dec 2 2002

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abstract = "The dielectric constant of plasma enhanced chemical vapor deposition (PECVD) films was reduced. As-deposited films were also annealed at 200 °C for 8 h in nitrogen atmosphere to compare the effect of thermal annealing without supercritical carbon dioxide (SCCO2). The results showed that the extraction creates molecular or nanoscale porosity thereby reducing dielectric constant.",

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AU - Rajagopalan, T.

AU - Lahlouh, B.

AU - Simon, S. L.

AU - Gangopadhyay, S.

PY - 2002/12/2

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AB - The dielectric constant of plasma enhanced chemical vapor deposition (PECVD) films was reduced. As-deposited films were also annealed at 200 °C for 8 h in nitrogen atmosphere to compare the effect of thermal annealing without supercritical carbon dioxide (SCCO2). The results showed that the extraction creates molecular or nanoscale porosity thereby reducing dielectric constant.

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Supercritical carbon dioxide extraction to produce low-k plasma enhanced chemical vapor deposited dielectric films

Abstract

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