Supercritical carbon dioxide extraction to produce low-k plasma enhanced chemical vapor deposited dielectric films

J. A. Lubguban, J. Sun, T. Rajagopalan, B. Lahlouh, S. L. Simon, S. Gangopadhyay

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The dielectric constant of plasma enhanced chemical vapor deposition (PECVD) films was reduced. As-deposited films were also annealed at 200 °C for 8 h in nitrogen atmosphere to compare the effect of thermal annealing without supercritical carbon dioxide (SCCO2). The results showed that the extraction creates molecular or nanoscale porosity thereby reducing dielectric constant.

Original languageEnglish
Pages (from-to)4407-4409
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number23
DOIs
StatePublished - Dec 2 2002

Fingerprint Dive into the research topics of 'Supercritical carbon dioxide extraction to produce low-k plasma enhanced chemical vapor deposited dielectric films'. Together they form a unique fingerprint.

Cite this