Abstract
The dielectric constant of plasma enhanced chemical vapor deposition (PECVD) films was reduced. As-deposited films were also annealed at 200 °C for 8 h in nitrogen atmosphere to compare the effect of thermal annealing without supercritical carbon dioxide (SCCO2). The results showed that the extraction creates molecular or nanoscale porosity thereby reducing dielectric constant.
Original language | English |
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Pages (from-to) | 4407-4409 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 23 |
DOIs | |
State | Published - Dec 2 2002 |