Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 v solid-state-circuit-breakers

V. Veliadis, B. Steiner, K. Lawson, S. B. Bayne, D. Urciuoli, H. C. Ha

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

A requirement for the commercialization of power SiC transistors is their long term reliable operation under the hard switching conditions and high temperatures encountered in the field. Normally-ON 1200 V vertical-channel implanted-gate SiC JFETs, designed for high-power bidirectional (four quadrant) solid-state-circuit-breaker applications, were repetitively pulse hard switched at 150 °C from a 1200 V blocking state to an on-state current of 115 A, which is in excess of 13 times the JFET's 250-W/cm2 rated current at 150 °C. The JFETs were fabricated in seven photolithographic levels with a single masked ion-implantation forming the p+ gates and guard rings, and with no epitaxial regrowth. The pulsed testing was performed using a low inductance RLC circuit. In this circuit, energy initially stored in a capacitor is discharged in a load resistor through the JFET under test. The JFET hard-switch stressing included over 2.4 million 1200-V/115-A hard-switch events at 150 °C and at a repetition rate of 10 Hz. The peak energies and powers dissipated by the JFET at each hard-switch event were 73.2 mJ and 68.2 kW, respectively. The current rise rate was 166 A/μs and the pulse FWHM was 1.8 μs. After over 2.4 million hard-switch events at 150 °C, the JFET blocking voltage characteristics remained unchanged while the on-state conduction slightly improved, which indicate reliable operation. An optically triggered solid-state-circuit-breaker, based on these rugged JFET, is proposed.

Original languageEnglish
Title of host publicationWiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages162-165
Number of pages4
ISBN (Electronic)9781467378857
DOIs
StatePublished - Dec 30 2015
Event3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 - Blacksburg, United States
Duration: Nov 2 2015Nov 4 2015

Publication series

NameWiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications

Conference

Conference3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015
CountryUnited States
CityBlacksburg
Period11/2/1511/4/15

Keywords

  • 1200-V
  • JFET
  • SiC
  • bidirectional
  • fault isolation
  • four quadrant
  • hard switching
  • high temperature
  • high voltage
  • normally-ON
  • pulsing
  • reliability
  • solid state circuit breaker

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