We have studied non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN by subpicosecond time-resolved Raman spectroscopy. Our experimental results show that for electron densities n ≥ 5×1017cm-3, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the effective electron temperature much higher than the lattice temperature. In addition, we find that the total electron-longitudinal optical phonon scattering rate in GaN is about one order of magnitude larger than that in GaAs. We attribute this enormous increase in the electron-longitudinal optical phonon scattering rate to the much larger ionicity in GaN.
|Number of pages||10|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 1998|
|Event||Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States|
Duration: Jan 28 1998 → Jan 29 1998