Field-induced electron transport in an In xGa 1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa 1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.
|Number of pages||8|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 2004|
|Event||Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States|
Duration: Jan 26 2004 → Jan 29 2004