Subpicosecond Raman studies of non-equilibrium electron transport in an In 0.4Ga 0.6N epilayer grown on GaN

W. Liang; K. T. Tsen; D. K. Ferry; K. H. Kim; J. Y. Lin; H. X. Jiang

doi:10.1117/12.528322

Subpicosecond Raman studies of non-equilibrium electron transport in an In _0.4Ga _0.6N epilayer grown on GaN

W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Field-induced electron transport in an In _xGa _1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In _xGa _1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original language	English
Pages (from-to)	404-411
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5352
DOIs	https://doi.org/10.1117/12.528322
State	Published - 2004
Event	Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States Duration: Jan 26 2004 → Jan 29 2004

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title = "Subpicosecond Raman studies of non-equilibrium electron transport in an In 0.4Ga 0.6N epilayer grown on GaN",

abstract = "Field-induced electron transport in an In xGa 1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa 1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.",

author = "W. Liang and Tsen, {K. T.} and Ferry, {D. K.} and Kim, {K. H.} and Lin, {J. Y.} and Jiang, {H. X.}",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "null ; Conference date: 26-01-2004 Through 29-01-2004",

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Subpicosecond Raman studies of non-equilibrium electron transport in an In _0.4Ga _0.6N epilayer grown on GaN. / Liang, W.; Tsen, K. T.; Ferry, D. K.; Kim, K. H.; Lin, J. Y.; Jiang, H. X.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5352, 2004, p. 404-411.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Subpicosecond Raman studies of non-equilibrium electron transport in an In 0.4Ga 0.6N epilayer grown on GaN

AU - Liang, W.

AU - Tsen, K. T.

AU - Ferry, D. K.

AU - Kim, K. H.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2004

Y1 - 2004

N2 - Field-induced electron transport in an In xGa 1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa 1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

AB - Field-induced electron transport in an In xGa 1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa 1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

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U2 - 10.1117/12.528322

DO - 10.1117/12.528322

M3 - Conference article

AN - SCOPUS:3543135960

VL - 5352

SP - 404

EP - 411

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

Y2 - 26 January 2004 through 29 January 2004

ER -

Subpicosecond Raman studies of non-equilibrium electron transport in an In _0.4Ga _0.6N epilayer grown on GaN

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