Subpicosecond Raman studies of non-equilibrium electron transport in an In 0.4Ga 0.6N epilayer grown on GaN

W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalConference articlepeer-review

Abstract

Field-induced electron transport in an In xGa 1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa 1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original languageEnglish
Pages (from-to)404-411
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5352
DOIs
StatePublished - 2004
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States
Duration: Jan 26 2004Jan 29 2004

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