Abstract
Field-induced electron transport in an In xGa 1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa 1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.
Original language | English |
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Pages (from-to) | 404-411 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5352 |
DOIs | |
State | Published - 2004 |
Event | Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States Duration: Jan 26 2004 → Jan 29 2004 |