Sublimation growth of aluminum nitride crystals

Z. Gu, L. Du, J. H. Edgar, N. Nepal, J. Y. Lin, H. X. Jiang, R. Witt

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

The crystal growth of AlN unseeded on a tungsten crucible lid and seeded on a polycrystalline AlN wafer is compared. AlN crystals with a preferential (0 0 0 1) orientation were achieved in both methods, as demonstrated by electron backscattering diffraction. The AlN grain size increased with the thickness of the AlN crystals. Seeded growth produced larger grains than unseeded growth (average grain size of less than 500 μm compared to 2-3 mm). Photoluminescence confirmed the high quality of the resultant AlN crystals.

Original languageEnglish
Pages (from-to)105-110
Number of pages6
JournalJournal of Crystal Growth
Volume297
Issue number1
DOIs
StatePublished - Dec 15 2006

Keywords

  • A2. Growth from vapor
  • B1. Nitrides
  • B2. Semiconducting materials

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