Sublimation growth of aluminum nitride crystals

Z. Gu; L. Du; J. H. Edgar; N. Nepal; J. Y. Lin; H. X. Jiang; R. Witt

doi:10.1016/j.jcrysgro.2006.09.038

Sublimation growth of aluminum nitride crystals

Z. Gu, L. Du, J. H. Edgar, N. Nepal, J. Y. Lin, H. X. Jiang, R. Witt

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The crystal growth of AlN unseeded on a tungsten crucible lid and seeded on a polycrystalline AlN wafer is compared. AlN crystals with a preferential (0 0 0 1) orientation were achieved in both methods, as demonstrated by electron backscattering diffraction. The AlN grain size increased with the thickness of the AlN crystals. Seeded growth produced larger grains than unseeded growth (average grain size of less than 500 μm compared to 2-3 mm). Photoluminescence confirmed the high quality of the resultant AlN crystals.

Original language	English
Pages (from-to)	105-110
Number of pages	6
Journal	Journal of Crystal Growth
Volume	297
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.09.038
State	Published - Dec 15 2006

Keywords

A2. Growth from vapor
B1. Nitrides
B2. Semiconducting materials

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10.1016/j.jcrysgro.2006.09.038

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title = "Sublimation growth of aluminum nitride crystals",

abstract = "The crystal growth of AlN unseeded on a tungsten crucible lid and seeded on a polycrystalline AlN wafer is compared. AlN crystals with a preferential (0 0 0 1) orientation were achieved in both methods, as demonstrated by electron backscattering diffraction. The AlN grain size increased with the thickness of the AlN crystals. Seeded growth produced larger grains than unseeded growth (average grain size of less than 500 μm compared to 2-3 mm). Photoluminescence confirmed the high quality of the resultant AlN crystals.",

keywords = "A2. Growth from vapor, B1. Nitrides, B2. Semiconducting materials",

author = "Z. Gu and L. Du and {H. Edgar}, J. and N. Nepal and Lin, {J. Y.} and Jiang, {H. X.} and R. Witt",

note = "Funding Information: The support from the National Science Foundation Division of Materials Research (grant DMR-0408874 and 0515858, DMR-0504601) is greatly appreciated.",

year = "2006",

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doi = "10.1016/j.jcrysgro.2006.09.038",

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volume = "297",

pages = "105--110",

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T1 - Sublimation growth of aluminum nitride crystals

AU - Gu, Z.

AU - Du, L.

AU - H. Edgar, J.

AU - Nepal, N.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Witt, R.

N1 - Funding Information: The support from the National Science Foundation Division of Materials Research (grant DMR-0408874 and 0515858, DMR-0504601) is greatly appreciated.

PY - 2006/12/15

Y1 - 2006/12/15

N2 - The crystal growth of AlN unseeded on a tungsten crucible lid and seeded on a polycrystalline AlN wafer is compared. AlN crystals with a preferential (0 0 0 1) orientation were achieved in both methods, as demonstrated by electron backscattering diffraction. The AlN grain size increased with the thickness of the AlN crystals. Seeded growth produced larger grains than unseeded growth (average grain size of less than 500 μm compared to 2-3 mm). Photoluminescence confirmed the high quality of the resultant AlN crystals.

AB - The crystal growth of AlN unseeded on a tungsten crucible lid and seeded on a polycrystalline AlN wafer is compared. AlN crystals with a preferential (0 0 0 1) orientation were achieved in both methods, as demonstrated by electron backscattering diffraction. The AlN grain size increased with the thickness of the AlN crystals. Seeded growth produced larger grains than unseeded growth (average grain size of less than 500 μm compared to 2-3 mm). Photoluminescence confirmed the high quality of the resultant AlN crystals.

KW - A2. Growth from vapor

KW - B1. Nitrides

KW - B2. Semiconducting materials

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DO - 10.1016/j.jcrysgro.2006.09.038

M3 - Article

AN - SCOPUS:33751517692

SN - 0022-0248

VL - 297

SP - 105

EP - 110

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Sublimation growth of aluminum nitride crystals

Abstract

Keywords

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