Studies of muon implantation in amorphous and crystalline silicon

E. A. Davis, A. Singh, S. F.J. Cox, S. R. Kreitzman, T. L. Estle, B. Hitti, R. L. Lichti, D. Lamp, R. Duvarney, D. W. Cooke, M. Paciotti, A. C. Wright

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A study has been made of muons implanted into a-Si, a-Si:H, a-Si:D and, for comparison, polycrystalline Si. Resonance spectra were observed and measurements of the repolarisation of the promptly formed analogue of hydrogen, namely muonium, and of the fraction of muonium which reaches a diamagnetic state, were made. It is inferred that trapping sites exist, one of which is interstitial and the other bond-centred. A larger observed diamagnetic fraction in the amorphous samples is associated with muonium ionization by electron loss to tail states or to trapping at dangling bonds.

Original languageEnglish
Pages (from-to)17-20
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 1
StatePublished - 1991


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