Studies of field-induced nonequilibrium electron transport in an InxGa1-xN (x≅0.6) epilayer grown on GaN

W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

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Abstract

A study was performed on field-induced nonequilibrium electron transport in an InxGa1-xN (x≅0.6) epilayer grown on GaN. Subpicosecond Raman spectroscopy was used to study the electron transport. Electron drift velocity and nonequilibrium electron distribution due to the presence of piezoelectric and spontaneous fields in the InxGa1-xN layer were directly measured.

Original languageEnglish
Pages (from-to)1413-1415
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number9
DOIs
StatePublished - Mar 3 2003

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