Structure quality of single-domain MBE GaAs layers grown on hydrogen passivated Si(001) substrates

V. G. Antipov; R. N. Kutt; S. A. Nikishin; S. S. Ruvimov; L. M. Sorokin; M. V. Stepanov

Structure quality of single-domain MBE GaAs layers grown on hydrogen passivated Si(001) substrates

V. G. Antipov, R. N. Kutt, S. A. Nikishin, S. S. Ruvimov, L. M. Sorokin, M. V. Stepanov

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

By means of relatively simple technological process of molecular beam epitaxy growth the GaAs films with reasonable structural quality (density ofthreading dislocations ≈10⁷ cm^-2 at GaAs thickness ≈2 μm) have been obtained with no pregrowth high-temperature treatment (T≤550 C⁰). To characterize the structure of grown GaAs layers X-ray difractometry (XRD), reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) were used. As was shown in [1], such layers were suitable for fast-response photodetectors of AlGaAs/GaAs type fabrication by combination of liquid-phase epitaxy (LPE) and MBE. Microcatodoluminescence data indicated that the LPE stage could reduce to (2-3) 10⁴ cm^-2, the density of dislocations in the active regions of device structure of total thickness ≈10 μm.

Original language	English
Pages (from-to)	1595-1598
Number of pages	4
Journal	Materials Science Forum
Volume	143-4
Issue number	pt 3
State	Published - 1994
Event	Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993

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title = "Structure quality of single-domain MBE GaAs layers grown on hydrogen passivated Si(001) substrates",

abstract = "By means of relatively simple technological process of molecular beam epitaxy growth the GaAs films with reasonable structural quality (density ofthreading dislocations ≈107 cm-2 at GaAs thickness ≈2 μm) have been obtained with no pregrowth high-temperature treatment (T≤550 C0). To characterize the structure of grown GaAs layers X-ray difractometry (XRD), reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) were used. As was shown in [1], such layers were suitable for fast-response photodetectors of AlGaAs/GaAs type fabrication by combination of liquid-phase epitaxy (LPE) and MBE. Microcatodoluminescence data indicated that the LPE stage could reduce to (2-3) 104 cm-2, the density of dislocations in the active regions of device structure of total thickness ≈10 μm.",

author = "Antipov, {V. G.} and Kutt, {R. N.} and Nikishin, {S. A.} and Ruvimov, {S. S.} and Sorokin, {L. M.} and Stepanov, {M. V.}",

year = "1994",

language = "English",

volume = "143-4",

pages = "1595--1598",

journal = "Materials Science Forum",

issn = "0255-5476",

number = "pt 3",

note = "null ; Conference date: 18-07-1993 Through 23-07-1993",

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TY - JOUR

T1 - Structure quality of single-domain MBE GaAs layers grown on hydrogen passivated Si(001) substrates

AU - Antipov, V. G.

AU - Kutt, R. N.

AU - Nikishin, S. A.

AU - Ruvimov, S. S.

AU - Sorokin, L. M.

AU - Stepanov, M. V.

PY - 1994

Y1 - 1994

N2 - By means of relatively simple technological process of molecular beam epitaxy growth the GaAs films with reasonable structural quality (density ofthreading dislocations ≈107 cm-2 at GaAs thickness ≈2 μm) have been obtained with no pregrowth high-temperature treatment (T≤550 C0). To characterize the structure of grown GaAs layers X-ray difractometry (XRD), reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) were used. As was shown in [1], such layers were suitable for fast-response photodetectors of AlGaAs/GaAs type fabrication by combination of liquid-phase epitaxy (LPE) and MBE. Microcatodoluminescence data indicated that the LPE stage could reduce to (2-3) 104 cm-2, the density of dislocations in the active regions of device structure of total thickness ≈10 μm.

AB - By means of relatively simple technological process of molecular beam epitaxy growth the GaAs films with reasonable structural quality (density ofthreading dislocations ≈107 cm-2 at GaAs thickness ≈2 μm) have been obtained with no pregrowth high-temperature treatment (T≤550 C0). To characterize the structure of grown GaAs layers X-ray difractometry (XRD), reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) were used. As was shown in [1], such layers were suitable for fast-response photodetectors of AlGaAs/GaAs type fabrication by combination of liquid-phase epitaxy (LPE) and MBE. Microcatodoluminescence data indicated that the LPE stage could reduce to (2-3) 104 cm-2, the density of dislocations in the active regions of device structure of total thickness ≈10 μm.

UR - http://www.scopus.com/inward/record.url?scp=0028571271&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028571271

VL - 143-4

SP - 1595

EP - 1598

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - pt 3

Y2 - 18 July 1993 through 23 July 1993

ER -

Structure quality of single-domain MBE GaAs layers grown on hydrogen passivated Si(001) substrates

Abstract

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