Structure quality of single-domain MBE GaAs layers grown on hydrogen passivated Si(001) substrates

V. G. Antipov, R. N. Kutt, S. A. Nikishin, S. S. Ruvimov, L. M. Sorokin, M. V. Stepanov

Research output: Contribution to journalConference article

Abstract

By means of relatively simple technological process of molecular beam epitaxy growth the GaAs films with reasonable structural quality (density ofthreading dislocations ≈107 cm-2 at GaAs thickness ≈2 μm) have been obtained with no pregrowth high-temperature treatment (T≤550 C0). To characterize the structure of grown GaAs layers X-ray difractometry (XRD), reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) were used. As was shown in [1], such layers were suitable for fast-response photodetectors of AlGaAs/GaAs type fabrication by combination of liquid-phase epitaxy (LPE) and MBE. Microcatodoluminescence data indicated that the LPE stage could reduce to (2-3) 104 cm-2, the density of dislocations in the active regions of device structure of total thickness ≈10 μm.

Original languageEnglish
Pages (from-to)1595-1598
Number of pages4
JournalMaterials Science Forum
Volume143-4
Issue numberpt 3
StatePublished - 1994
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

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