By means of relatively simple technological process of molecular beam epitaxy growth the GaAs films with reasonable structural quality (density ofthreading dislocations ≈107 cm-2 at GaAs thickness ≈2 μm) have been obtained with no pregrowth high-temperature treatment (T≤550 C0). To characterize the structure of grown GaAs layers X-ray difractometry (XRD), reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) were used. As was shown in , such layers were suitable for fast-response photodetectors of AlGaAs/GaAs type fabrication by combination of liquid-phase epitaxy (LPE) and MBE. Microcatodoluminescence data indicated that the LPE stage could reduce to (2-3) 104 cm-2, the density of dislocations in the active regions of device structure of total thickness ≈10 μm.
|Number of pages||4|
|Journal||Materials Science Forum|
|Issue number||pt 3|
|State||Published - 1994|
|Event||Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria|
Duration: Jul 18 1993 → Jul 23 1993