TY - JOUR
T1 - Structural, morphological, optical and electrical properties of bulk (0001) GaN:Fe Wafers
AU - Gaddy, M.
AU - Kuryatkov, V.
AU - Meyers, V.
AU - Mauch, D.
AU - Dickens, J.
AU - Neuber, A.
AU - Nikishin, S.
N1 - Publisher Copyright:
Copyright © Materials Research Society 2018.
PY - 2018
Y1 - 2018
N2 - Characterization of three vendor's bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: Scanning electron microscopy, secondary ion mass spectroscopy, high resolution X-ray diffraction, cathodoluminescence, photoluminescence, and high voltage testing. Although the Fe doping level is significantly different for each growth method, both are promising for the fabrication of PCSS devices operating in the lock-on mode.
AB - Characterization of three vendor's bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: Scanning electron microscopy, secondary ion mass spectroscopy, high resolution X-ray diffraction, cathodoluminescence, photoluminescence, and high voltage testing. Although the Fe doping level is significantly different for each growth method, both are promising for the fabrication of PCSS devices operating in the lock-on mode.
KW - X-ray diffraction (XRD)
KW - optical properties
KW - secondary ion mass spectroscopy (SIMS)
UR - http://www.scopus.com/inward/record.url?scp=85045418720&partnerID=8YFLogxK
U2 - 10.1557/adv.2018.234
DO - 10.1557/adv.2018.234
M3 - Article
AN - SCOPUS:85045418720
SN - 2059-8521
VL - 3
SP - 179
EP - 184
JO - MRS Advances
JF - MRS Advances
IS - 3
ER -