Structural, morphological, optical and electrical properties of bulk (0001) GaN:Fe Wafers

M. Gaddy, V. Kuryatkov, V. Meyers, D. Mauch, J. Dickens, A. Neuber, S. Nikishin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Characterization of three vendor's bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: Scanning electron microscopy, secondary ion mass spectroscopy, high resolution X-ray diffraction, cathodoluminescence, photoluminescence, and high voltage testing. Although the Fe doping level is significantly different for each growth method, both are promising for the fabrication of PCSS devices operating in the lock-on mode.

Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalMRS Advances
Issue number3
StatePublished - 2018


  • X-ray diffraction (XRD)
  • optical properties
  • secondary ion mass spectroscopy (SIMS)


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