TY - JOUR

T1 - "Structural, electronic, phonon and thermodynamic properties of hypothetical type-VIII clathrates Ba8Si46 and Ba8Al16Si30 investigated by first principles"

AU - Norouzzadeh, Payam

AU - Myles, Charles

AU - Vashaee, Daryoosh

PY - 2014/2/25

Y1 - 2014/2/25

N2 - We present the results of first principles calculations of the structural, electronic, elastic, vibrational, and thermodynamic properties of the hypothetical silicon-based, guest containing type-VIII clathrates Ba8Si46 and Ba8Al16Si30. We obtained the lattice constant, formation energy, band structure, density of states, elastic constants, sound velocity, and Debye temperature using the density functional theory with generalized gradient approximation (GGA). We calculated phonon dispersion and vibrational density of states spectra using the density functional perturbation energy within GGA. We computed the temperature
dependent specific heat, vibrational entropy, and vibrational Helmholtz free energy by utilizing quasi-harmonic approximation. We found that replacing some silicon atoms in the framework with
aluminum atoms leads to the decrease of the fundamental band gap from 1.0 in Ba8Si46 to 0.18 eV in Ba8Al16Si30. Moreover, the guest Ba atoms produced localized phonon modes lying be

AB - We present the results of first principles calculations of the structural, electronic, elastic, vibrational, and thermodynamic properties of the hypothetical silicon-based, guest containing type-VIII clathrates Ba8Si46 and Ba8Al16Si30. We obtained the lattice constant, formation energy, band structure, density of states, elastic constants, sound velocity, and Debye temperature using the density functional theory with generalized gradient approximation (GGA). We calculated phonon dispersion and vibrational density of states spectra using the density functional perturbation energy within GGA. We computed the temperature
dependent specific heat, vibrational entropy, and vibrational Helmholtz free energy by utilizing quasi-harmonic approximation. We found that replacing some silicon atoms in the framework with
aluminum atoms leads to the decrease of the fundamental band gap from 1.0 in Ba8Si46 to 0.18 eV in Ba8Al16Si30. Moreover, the guest Ba atoms produced localized phonon modes lying be

M3 - Article

SP - 474

EP - 480

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -