Structural analysis of N-polar AlN layers grown on Si (111) substrates by high resolution X-ray diffraction

Mahesh Pandikunta, Oleg Ledyaev, Vladimir Kuryatkov, Sergey A. Nikishin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Crack-free high quality N-polar AlN epitaxial layers were grown on Si (111) substrates by plasma-assisted molecular beam epitaxy in the temperature range of 780-880 °C. The streaky 1×3 reflection high energy electron diffraction pattern was observed at room temperature for all AlN samples indicating N-polarity of epilayers. The polarity of samples was also confirmed by KOH etching studies. Structural properties of as-grown samples were carried out by high resolution X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The Williamson-Hall plots of the rocking curves widths were employed in order to study the mosaicity, dislocation density, and level of stress as a function of growth temperature. The 250 nm thick AlN sample grown at 830 °C yields the best crystalline quality, smooth surface morphology, and smallest root mean square roughness.

Original languageEnglish
Pages (from-to)487-490
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number3-4
DOIs
StatePublished - Apr 2014

Keywords

  • AlN
  • MBE
  • Si substrate
  • XRD

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