Strong green luminescence in quaternary InAlGaN thin films

Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, C. C. Yang, Kung Jeng Ma, Chih Chiang Yan, Chen Hsu, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Strong green luminescence (around 2.37 eV) was observed in two InAlGaN thin film samples, which were originally prepared for applications in the ultraviolet range. Fourth harmonic (266 nm) of a Q-switch Nd:yttritium-aluminum-garnet laser was used as the excitation source. Observation of green luminescence was attributed to the formation of indium-rich clusters, which formed localized states in the quaternary films.

Original languageEnglish
Pages (from-to)1377-1379
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number9
DOIs
StatePublished - Mar 3 2003

Fingerprint Dive into the research topics of 'Strong green luminescence in quaternary InAlGaN thin films'. Together they form a unique fingerprint.

Cite this