Strain evolution and dopant activation in P-lmplanted metastable pseudomorphic Si(100)/Ge0.12Si0.88

D. Y.C. Lie, J. H. Song, F. Eisen, M. A. Nicolet, N. B. Theodore

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


A metastable Ge0.12Si0.88 layer 265 nm thick was deposited pseudomorphically on a Si(100) substrate and then implanted with 100 keV phosphorus ions at room temperature for doses of 5 × 1013/cm2 to 1.5 × 1015/cm2. The ions stop within the epilayer (projected range ∼125 nm). MeV 4He backscattering/channeling spectrometry, transmission electron microscopy, and double-crystal x-ray diffractometry were used to characterize the damage and strain in the films. The samples were subsequently annealed in high vacuum from 400-800°C for 30 min at each temperature. For the nonamorphized samples (doses of 5 and 10 × 1013/cm2), most of the implantation-induced damage and strain disappear after annealing at 400-550°C, but the implanted P ions activate poorly. After annealing at 700-800°C, near complete activation is achieved but the strain relaxes For the amorphized samples (dose of 1.5 × 1015/cm2), the amorphous GeSi regrows by solid-phase epitaxy and the dopants are ∼100% activated after annealing at 550°C, but the regrown GeSi relaxes with a high density of dislocations. The strain relaxes more extensively upon annealing in an implanted sample than in a nonimplanted one, other conditions being equal. This effect is more pronounced at higher ion doses, probably due to the increased amount of damage introduced at high doses.

Original languageEnglish
Pages (from-to)87-92
Number of pages6
JournalJournal of Electronic Materials
Issue number1
StatePublished - Jan 1996


  • Dopant activation
  • Implantation
  • Silicon-germanium
  • Solid-phase epitaxy
  • Strain relaxation


Dive into the research topics of 'Strain evolution and dopant activation in P-lmplanted metastable pseudomorphic Si(100)/Ge0.12Si0.88'. Together they form a unique fingerprint.

Cite this