Abstract
InGaAs/InP strained-layer modulation -doped quantum wells were studied by photoluminescence. The combination of the built-in strain and the quantum confinement in this system leads to a strong valence band mixing yielding direct and indirect band gap structures. We demonstrate that the optical emission line shape is strongly dependent on the valence band dispersion and it is a good method to distinguish between direct and indirect structures. The application of an external biaxial tensile strain to the samples provides an additional evidence of direct-to-indirect band gap transition in strained heterostructures.
Original language | English |
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Article number | 153301 |
Pages (from-to) | 1533011-1533014 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 64 |
Issue number | 15 |
DOIs | |
State | Published - Oct 15 2001 |