Strain-dependent optical emission in In1 - xGaxAs/InP quantum wells

H. A.P. Tudury, M. K.K. Nakaema, F. Iikawa, J. A. Brum, E. Ribeiro, W. Carvalho, A. A. Bernussi, A. L. Gobbi

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


InGaAs/InP strained-layer modulation -doped quantum wells were studied by photoluminescence. The combination of the built-in strain and the quantum confinement in this system leads to a strong valence band mixing yielding direct and indirect band gap structures. We demonstrate that the optical emission line shape is strongly dependent on the valence band dispersion and it is a good method to distinguish between direct and indirect structures. The application of an external biaxial tensile strain to the samples provides an additional evidence of direct-to-indirect band gap transition in strained heterostructures.

Original languageEnglish
Article number153301
Pages (from-to)1533011-1533014
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number15
StatePublished - Oct 15 2001


Dive into the research topics of 'Strain-dependent optical emission in In1 - xGaxAs/InP quantum wells'. Together they form a unique fingerprint.

Cite this