Steady-state versus rapid thermal annealing of phosphorus-implanted pseudomorphic Si(100)/Ge0.12Si0.88

D. Y.C. Lie, J. H. Song, N. D. Theodore, F. Eisen, M. A. Nicolet, T. K. Carns, K. L. Wang, H. Kinoshita, Tzu Hsin Huang, D. L. Kwong

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