State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells

M. L.F. Abbade; F. Iikawa; J. A. Brum; Th Tröster; A. A. Bernussi; R. G. Pereira; G. Borghs

doi:10.1063/1.362942

State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells

M. L.F. Abbade, F. Iikawa, J. A. Brum, Th Tröster, A. A. Bernussi, R. G. Pereira, G. Borghs

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Photoluminescence and magneto-luminescence techniques were used to evaluate the optical properties of pseudomorphic GaAs/In_0.2Ga_0.8As/Al_0.25Ga_0.75As modulation doped single quantum wells. The data are analyzed using self-consistent calculations that predict a strong coupling between the InGaAs quantum well and the potential well formed in the AlGaAs barrier due to planar-doping. The coupling effect gives rise to additional transitions in the emission spectra. Temperature and magnetic field dependence of luminescence spectra provide strong evidence of indirect transitions in these structures.

Original language	English
Pages (from-to)	1925-1927
Number of pages	3
Journal	Journal of Applied Physics
Volume	80
Issue number	3
DOIs	https://doi.org/10.1063/1.362942
State	Published - Aug 1 1996

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@article{a688277875eb486d982afbb58b3b6d4f,

title = "State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells",

abstract = "Photoluminescence and magneto-luminescence techniques were used to evaluate the optical properties of pseudomorphic GaAs/In0.2Ga0.8As/Al0.25Ga0.75As modulation doped single quantum wells. The data are analyzed using self-consistent calculations that predict a strong coupling between the InGaAs quantum well and the potential well formed in the AlGaAs barrier due to planar-doping. The coupling effect gives rise to additional transitions in the emission spectra. Temperature and magnetic field dependence of luminescence spectra provide strong evidence of indirect transitions in these structures.",

author = "Abbade, {M. L.F.} and F. Iikawa and Brum, {J. A.} and Th Tr{\"o}ster and Bernussi, {A. A.} and Pereira, {R. G.} and G. Borghs",

year = "1996",

month = aug,

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doi = "10.1063/1.362942",

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T1 - State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells

AU - Abbade, M. L.F.

AU - Iikawa, F.

AU - Brum, J. A.

AU - Tröster, Th

AU - Bernussi, A. A.

AU - Pereira, R. G.

AU - Borghs, G.

PY - 1996/8/1

Y1 - 1996/8/1

N2 - Photoluminescence and magneto-luminescence techniques were used to evaluate the optical properties of pseudomorphic GaAs/In0.2Ga0.8As/Al0.25Ga0.75As modulation doped single quantum wells. The data are analyzed using self-consistent calculations that predict a strong coupling between the InGaAs quantum well and the potential well formed in the AlGaAs barrier due to planar-doping. The coupling effect gives rise to additional transitions in the emission spectra. Temperature and magnetic field dependence of luminescence spectra provide strong evidence of indirect transitions in these structures.

AB - Photoluminescence and magneto-luminescence techniques were used to evaluate the optical properties of pseudomorphic GaAs/In0.2Ga0.8As/Al0.25Ga0.75As modulation doped single quantum wells. The data are analyzed using self-consistent calculations that predict a strong coupling between the InGaAs quantum well and the potential well formed in the AlGaAs barrier due to planar-doping. The coupling effect gives rise to additional transitions in the emission spectra. Temperature and magnetic field dependence of luminescence spectra provide strong evidence of indirect transitions in these structures.

UR - http://www.scopus.com/inward/record.url?scp=0000807393&partnerID=8YFLogxK

U2 - 10.1063/1.362942

DO - 10.1063/1.362942

M3 - Article

AN - SCOPUS:0000807393

SN - 0021-8979

VL - 80

SP - 1925

EP - 1927

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells

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