State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells

M. L.F. Abbade, F. Iikawa, J. A. Brum, Th Tröster, A. A. Bernussi, R. G. Pereira, G. Borghs

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Photoluminescence and magneto-luminescence techniques were used to evaluate the optical properties of pseudomorphic GaAs/In0.2Ga0.8As/Al0.25Ga0.75As modulation doped single quantum wells. The data are analyzed using self-consistent calculations that predict a strong coupling between the InGaAs quantum well and the potential well formed in the AlGaAs barrier due to planar-doping. The coupling effect gives rise to additional transitions in the emission spectra. Temperature and magnetic field dependence of luminescence spectra provide strong evidence of indirect transitions in these structures.

Original languageEnglish
Pages (from-to)1925-1927
Number of pages3
JournalJournal of Applied Physics
Volume80
Issue number3
DOIs
StatePublished - Aug 1 1996

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