Stacking-dependent shear modes in trilayer graphene

Chun Hung Lui, Zhipeng Ye, Courtney Keiser, Eduardo B. Barros, Rui He

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

We observe distinct interlayer shear mode Raman spectra for trilayer graphene with ABA and ABC stacking order. There are two rigid-plane shear-mode phonon branches in trilayer graphene. We find that ABA trilayers exhibit pronounced Raman response from the high-frequency shear branch, without any noticeable response from the low-frequency branch. In contrast, ABC trilayers exhibit no response from the high-frequency shear branch, but significant Raman response from the low-frequency branch. Such complementary behaviors of Raman shear modes can be explained by the distinct symmetry of the two trilayer allotropes. The strong stacking-order dependence is not found in the layer-breathing modes, and thus represents a unique characteristic of the shear modes.

Original languageEnglish
Article number041904
JournalApplied Physics Letters
Volume106
Issue number4
DOIs
StatePublished - Jan 26 2015

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