Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB 2-based Ohmic contacts

Hung Ta Wang; T. J. Anderson; B. S. Kang; F. Ren; Changzhi Li; Zhen Ning Low; Jenshan Lin; B. P. Gila; S. J. Pearton; A. Osinsky; Amir Dabiran

doi:10.1063/1.2751107

Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB ₂-based Ohmic contacts

Hung Ta Wang, T. J. Anderson, B. S. Kang, F. Ren, Changzhi Li, Zhen Ning Low, Jenshan Lin, B. P. Gila, S. J. Pearton, A. Osinsky, Amir Dabiran

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The use of TiB ₂-based Ohmic contacts on Pt-gate AlGaN/GaN heterostructure diode hydrogen sensors is shown to provide very stable operation for detection of 1% H ₂ in air under field conditions where temperature is allowed to vary. In contrast, the use of more conventional Ti/Al/Pt/Au Ohmic contacts led to higher background variations in current that affect the ultimate detection threshold of the sensors. Combined with a differential pair geometry that compares current from an active diode with Pt-gate contact and a passive diode with Ti/Au gate, the more stable TiB ₂-based Ohmic contacts reduce false alarms due to ambient temperature changes. The diodes exhibit a change in forward current of more than 1 m.A at 1.5 V when 1% H ₂ is introduced into an air ambient.

Original language	English
Article number	252109
Journal	Applied Physics Letters
Volume	90
Issue number	25
DOIs	https://doi.org/10.1063/1.2751107
State	Published - 2007

Access to Document

10.1063/1.2751107

Cite this

@article{510636359ed941da9f6b7507f2074973,

title = "Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB 2-based Ohmic contacts",

abstract = "The use of TiB 2-based Ohmic contacts on Pt-gate AlGaN/GaN heterostructure diode hydrogen sensors is shown to provide very stable operation for detection of 1% H 2 in air under field conditions where temperature is allowed to vary. In contrast, the use of more conventional Ti/Al/Pt/Au Ohmic contacts led to higher background variations in current that affect the ultimate detection threshold of the sensors. Combined with a differential pair geometry that compares current from an active diode with Pt-gate contact and a passive diode with Ti/Au gate, the more stable TiB 2-based Ohmic contacts reduce false alarms due to ambient temperature changes. The diodes exhibit a change in forward current of more than 1 m.A at 1.5 V when 1% H 2 is introduced into an air ambient.",

author = "Wang, {Hung Ta} and Anderson, {T. J.} and Kang, {B. S.} and F. Ren and Changzhi Li and Low, {Zhen Ning} and Jenshan Lin and Gila, {B. P.} and Pearton, {S. J.} and A. Osinsky and Amir Dabiran",

note = "Funding Information: The work at UF is partially supported by AFOSR, ONR (N00014-98-1-02-04), NSF DMR 0101438, and NSF CTS-0301178, and also by NASA Kennedy Space Center Grant No. NAG 10-316 monitored by Daniel E. Fitch. ",

year = "2007",

doi = "10.1063/1.2751107",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "25",

}

TY - JOUR

T1 - Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB 2-based Ohmic contacts

AU - Wang, Hung Ta

AU - Anderson, T. J.

AU - Kang, B. S.

AU - Ren, F.

AU - Li, Changzhi

AU - Low, Zhen Ning

AU - Lin, Jenshan

AU - Gila, B. P.

AU - Pearton, S. J.

AU - Osinsky, A.

AU - Dabiran, Amir

N1 - Funding Information: The work at UF is partially supported by AFOSR, ONR (N00014-98-1-02-04), NSF DMR 0101438, and NSF CTS-0301178, and also by NASA Kennedy Space Center Grant No. NAG 10-316 monitored by Daniel E. Fitch.

PY - 2007

Y1 - 2007

N2 - The use of TiB 2-based Ohmic contacts on Pt-gate AlGaN/GaN heterostructure diode hydrogen sensors is shown to provide very stable operation for detection of 1% H 2 in air under field conditions where temperature is allowed to vary. In contrast, the use of more conventional Ti/Al/Pt/Au Ohmic contacts led to higher background variations in current that affect the ultimate detection threshold of the sensors. Combined with a differential pair geometry that compares current from an active diode with Pt-gate contact and a passive diode with Ti/Au gate, the more stable TiB 2-based Ohmic contacts reduce false alarms due to ambient temperature changes. The diodes exhibit a change in forward current of more than 1 m.A at 1.5 V when 1% H 2 is introduced into an air ambient.

AB - The use of TiB 2-based Ohmic contacts on Pt-gate AlGaN/GaN heterostructure diode hydrogen sensors is shown to provide very stable operation for detection of 1% H 2 in air under field conditions where temperature is allowed to vary. In contrast, the use of more conventional Ti/Al/Pt/Au Ohmic contacts led to higher background variations in current that affect the ultimate detection threshold of the sensors. Combined with a differential pair geometry that compares current from an active diode with Pt-gate contact and a passive diode with Ti/Au gate, the more stable TiB 2-based Ohmic contacts reduce false alarms due to ambient temperature changes. The diodes exhibit a change in forward current of more than 1 m.A at 1.5 V when 1% H 2 is introduced into an air ambient.

UR - http://www.scopus.com/inward/record.url?scp=34547378181&partnerID=8YFLogxK

U2 - 10.1063/1.2751107

DO - 10.1063/1.2751107

M3 - Article

AN - SCOPUS:34547378181

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252109

ER -

Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB ₂-based Ohmic contacts

Abstract

Access to Document

Other files and links

Fingerprint

Cite this