Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

K. Makarova; M. Stachowicz; V. Glukhanyuk; A. Kozanecki; C. Ugolini; J. Y. Lin; H. X. Jiang; J. Zavada

doi:10.1016/j.mseb.2007.07.032

Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

K. Makarova, M. Stachowicz, V. Glukhanyuk, A. Kozanecki, C. Ugolini, J. Y. Lin, H. X. Jiang, J. Zavada

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2 × 10²⁰ to 2 × 10²¹ cm^-3) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the ⁴I_13/2 →⁴I_15/2 PL of Er³⁺ near 1.5 μm, site-selective PL and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been confirmed by ESR measurements. In ESR the axial Er³⁺ spectrum was observed with g_|| = 2.861 and g_⊥ = 7.645 characteristic for substitutional Er ions at Ga sites (C_3V symmetry). Angular dependence of the ESR did not point to the existence of other centers.

Original language	English
Pages (from-to)	193-195
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	146
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2007.07.032
State	Published - May 15 2008

Keywords

Erbium
Gallium nitride
Photoluminescence
Site-selective spectroscopy

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@article{add4038a4e6a4e6990664766747b5850,

title = "Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er",

abstract = "We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2 × 1020 to 2 × 1021 cm-3) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the 4I13/2 → 4I15/2 PL of Er3+ near 1.5 μm, site-selective PL and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been confirmed by ESR measurements. In ESR the axial Er3+ spectrum was observed with g|| = 2.861 and g⊥ = 7.645 characteristic for substitutional Er ions at Ga sites (C3V symmetry). Angular dependence of the ESR did not point to the existence of other centers.",

keywords = "Erbium, Gallium nitride, Photoluminescence, Site-selective spectroscopy",

author = "K. Makarova and M. Stachowicz and V. Glukhanyuk and A. Kozanecki and C. Ugolini and Lin, {J. Y.} and Jiang, {H. X.} and J. Zavada",

note = "Funding Information: KSU research is supported by a grant from US ARO.",

year = "2008",

month = may,

day = "15",

doi = "10.1016/j.mseb.2007.07.032",

language = "English",

volume = "146",

pages = "193--195",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

number = "1-3",

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TY - JOUR

T1 - Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

AU - Makarova, K.

AU - Stachowicz, M.

AU - Glukhanyuk, V.

AU - Kozanecki, A.

AU - Ugolini, C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Zavada, J.

N1 - Funding Information: KSU research is supported by a grant from US ARO.

PY - 2008/5/15

Y1 - 2008/5/15

N2 - We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2 × 1020 to 2 × 1021 cm-3) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the 4I13/2 → 4I15/2 PL of Er3+ near 1.5 μm, site-selective PL and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been confirmed by ESR measurements. In ESR the axial Er3+ spectrum was observed with g|| = 2.861 and g⊥ = 7.645 characteristic for substitutional Er ions at Ga sites (C3V symmetry). Angular dependence of the ESR did not point to the existence of other centers.

AB - We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2 × 1020 to 2 × 1021 cm-3) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the 4I13/2 → 4I15/2 PL of Er3+ near 1.5 μm, site-selective PL and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been confirmed by ESR measurements. In ESR the axial Er3+ spectrum was observed with g|| = 2.861 and g⊥ = 7.645 characteristic for substitutional Er ions at Ga sites (C3V symmetry). Angular dependence of the ESR did not point to the existence of other centers.

KW - Erbium

KW - Gallium nitride

KW - Photoluminescence

KW - Site-selective spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=37349083102&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2007.07.032

DO - 10.1016/j.mseb.2007.07.032

M3 - Article

AN - SCOPUS:37349083102

SN - 0921-5107

VL - 146

SP - 193

EP - 195

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

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Keywords

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