Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

K. Makarova, M. Stachowicz, V. Glukhanyuk, A. Kozanecki, C. Ugolini, J. Y. Lin, H. X. Jiang, J. Zavada

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19 Scopus citations


We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2 × 1020 to 2 × 1021 cm-3) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the 4I13/2 4I15/2 PL of Er3+ near 1.5 μm, site-selective PL and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been confirmed by ESR measurements. In ESR the axial Er3+ spectrum was observed with g|| = 2.861 and g = 7.645 characteristic for substitutional Er ions at Ga sites (C3V symmetry). Angular dependence of the ESR did not point to the existence of other centers.

Original languageEnglish
Pages (from-to)193-195
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
StatePublished - May 15 2008


  • Erbium
  • Gallium nitride
  • Photoluminescence
  • Site-selective spectroscopy


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