TY - JOUR
T1 - Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)
AU - Lie, D. Y.C.
AU - Song, J. H.
AU - Nicolet, M. A.
AU - Theodore, N. D.
AU - Candelaria, J.
AU - Thomas, S. G.
AU - Tanner, M. O.
AU - Wang, K. L.
PY - 1995
Y1 - 1995
N2 - Metastable pseudomorphic GexSi1-x (x=8%, 16%) films were deposited on p-Si(100) substrates by chemical-vapor-deposition and then implanted at room temperature with 90 keV arsenic ions to a dose of 1.5×1015/cm2. The implantation amorphizes approximately the top 125 nm of the 145 nm-thick GeSi layers. The Si-GeSi interfaces remain sharp after implantation. Implanted and non-implanted GeSi samples, together with implanted Si control samples, were subsequently annealed simultaneously by rapid thermal annealing in a nitrogen ambient at 600,700,800°C for 10,20,40s at each temperature. The implanted samples undergo layer-by-layer solid-phase epitaxial regrowth during annealing at or above 600°C. The amorphized and regrown GeSi layers are always fully relaxed with a very high density of dislocations (1010-1011/cm2). At a fixed annealing temperature, strain relaxation of an implanted GeSi film is substantially more extensive than that of a non-implanted one. About 50-90% of the implanted arsenic ions become electrically active after the completion of solid-phase epitaxy. The percentages of arsenic ions that are activated in the Si control samples are generally higher than those in GeSi. The room-temperature sheet electron mobility in GeSi is roughly 30% lower than that in Si for a given sheet electron concentration. We conclude that metastable GeSi on Si(100) amorphized by arsenic ions and recrystallized by solid-phase epitaxy cannot recover both its crystallinity and its pseudomorphic strain under rapid thermal annealing.
AB - Metastable pseudomorphic GexSi1-x (x=8%, 16%) films were deposited on p-Si(100) substrates by chemical-vapor-deposition and then implanted at room temperature with 90 keV arsenic ions to a dose of 1.5×1015/cm2. The implantation amorphizes approximately the top 125 nm of the 145 nm-thick GeSi layers. The Si-GeSi interfaces remain sharp after implantation. Implanted and non-implanted GeSi samples, together with implanted Si control samples, were subsequently annealed simultaneously by rapid thermal annealing in a nitrogen ambient at 600,700,800°C for 10,20,40s at each temperature. The implanted samples undergo layer-by-layer solid-phase epitaxial regrowth during annealing at or above 600°C. The amorphized and regrown GeSi layers are always fully relaxed with a very high density of dislocations (1010-1011/cm2). At a fixed annealing temperature, strain relaxation of an implanted GeSi film is substantially more extensive than that of a non-implanted one. About 50-90% of the implanted arsenic ions become electrically active after the completion of solid-phase epitaxy. The percentages of arsenic ions that are activated in the Si control samples are generally higher than those in GeSi. The room-temperature sheet electron mobility in GeSi is roughly 30% lower than that in Si for a given sheet electron concentration. We conclude that metastable GeSi on Si(100) amorphized by arsenic ions and recrystallized by solid-phase epitaxy cannot recover both its crystallinity and its pseudomorphic strain under rapid thermal annealing.
UR - http://www.scopus.com/inward/record.url?scp=0029544444&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0029544444
SN - 0272-9172
VL - 379
SP - 467
EP - 472
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1995 MRS Spring Meeting
Y2 - 17 April 1995 through 20 April 1995
ER -