Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)

D. Y.C. Lie, J. H. Song, M. A. Nicolet, N. D. Theodore, J. Candelaria, S. G. Thomas, M. O. Tanner, K. L. Wang

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Metastable pseudomorphic GexSi1-x (x=8%, 16%) films were deposited on p-Si(100) substrates by chemical-vapor-deposition and then implanted at room temperature with 90 keV arsenic ions to a dose of 1.5×1015/cm2. The implantation amorphizes approximately the top 125 nm of the 145 nm-thick GeSi layers. The Si-GeSi interfaces remain sharp after implantation. Implanted and non-implanted GeSi samples, together with implanted Si control samples, were subsequently annealed simultaneously by rapid thermal annealing in a nitrogen ambient at 600,700,800°C for 10,20,40s at each temperature. The implanted samples undergo layer-by-layer solid-phase epitaxial regrowth during annealing at or above 600°C. The amorphized and regrown GeSi layers are always fully relaxed with a very high density of dislocations (1010-1011/cm2). At a fixed annealing temperature, strain relaxation of an implanted GeSi film is substantially more extensive than that of a non-implanted one. About 50-90% of the implanted arsenic ions become electrically active after the completion of solid-phase epitaxy. The percentages of arsenic ions that are activated in the Si control samples are generally higher than those in GeSi. The room-temperature sheet electron mobility in GeSi is roughly 30% lower than that in Si for a given sheet electron concentration. We conclude that metastable GeSi on Si(100) amorphized by arsenic ions and recrystallized by solid-phase epitaxy cannot recover both its crystallinity and its pseudomorphic strain under rapid thermal annealing.

Original languageEnglish
Pages (from-to)467-472
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 20 1995


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