Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. Nikishin, H. Temkin, M. Holtz

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

Solar-blind photodetectors based on AlN/AlGa(In)N superlattices were discussed. Using simple mesa diodes, without surface passivation, low dark leakage currents of 02-0.3 pA were obtained. Excellent visible cutoff was obtained for these devices. The electrical characteristics of p-n junctions formed in these superlattices demonstrated their potential in large-band-gap devices.

Original languageEnglish
Pages (from-to)1323-1325
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number9
DOIs
StatePublished - Mar 3 2003

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