Abstract
Solar-blind photodetectors based on AlN/AlGa(In)N superlattices were discussed. Using simple mesa diodes, without surface passivation, low dark leakage currents of 02-0.3 pA were obtained. Excellent visible cutoff was obtained for these devices. The electrical characteristics of p-n junctions formed in these superlattices demonstrated their potential in large-band-gap devices.
Original language | English |
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Pages (from-to) | 1323-1325 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 9 |
DOIs | |
State | Published - Mar 3 2003 |