Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N

V. Kuryatkov; A. Chandolu; B. Borisov; G. Kipshidze; K. Zhu; S. Nikishin; H. Temkin; M. Holtz

doi:10.1063/1.1557325

Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. Nikishin, H. Temkin, M. Holtz

Electrical and Computer Engineering

Research output: Contribution to journal › Article

46 Scopus citations

Abstract

Solar-blind photodetectors based on AlN/AlGa(In)N superlattices were discussed. Using simple mesa diodes, without surface passivation, low dark leakage currents of 02-0.3 pA were obtained. Excellent visible cutoff was obtained for these devices. The electrical characteristics of p-n junctions formed in these superlattices demonstrated their potential in large-band-gap devices.

Original language	English
Pages (from-to)	1323-1325
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.1557325
State	Published - Mar 3 2003

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Kuryatkov, V., Chandolu, A., Borisov, B., Kipshidze, G., Zhu, K., Nikishin, S., Temkin, H., & Holtz, M. (2003). Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N. Applied Physics Letters, 82(9), 1323-1325. https://doi.org/10.1063/1.1557325

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abstract = "Solar-blind photodetectors based on AlN/AlGa(In)N superlattices were discussed. Using simple mesa diodes, without surface passivation, low dark leakage currents of 02-0.3 pA were obtained. Excellent visible cutoff was obtained for these devices. The electrical characteristics of p-n junctions formed in these superlattices demonstrated their potential in large-band-gap devices.",

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AU - Kuryatkov, V.

AU - Chandolu, A.

AU - Borisov, B.

AU - Kipshidze, G.

AU - Zhu, K.

AU - Nikishin, S.

AU - Temkin, H.

AU - Holtz, M.

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AB - Solar-blind photodetectors based on AlN/AlGa(In)N superlattices were discussed. Using simple mesa diodes, without surface passivation, low dark leakage currents of 02-0.3 pA were obtained. Excellent visible cutoff was obtained for these devices. The electrical characteristics of p-n junctions formed in these superlattices demonstrated their potential in large-band-gap devices.

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