Size dependence of III-nitride microdisk light-emitting diode characteristics

S. X. Jin; J. Shakya; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1376152

Size dependence of III-nitride microdisk light-emitting diode characteristics

S. X. Jin, J. Shakya, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

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57 Scopus citations

Abstract

Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I-V and L-I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications.

Original language	English
Pages (from-to)	3532-3534
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	22
DOIs	https://doi.org/10.1063/1.1376152
State	Published - May 28 2001

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title = "Size dependence of III-nitride microdisk light-emitting diode characteristics",

abstract = "Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I-V and L-I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications.",

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year = "2001",

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AU - Jin, S. X.

AU - Shakya, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2001/5/28

Y1 - 2001/5/28

N2 - Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I-V and L-I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications.

AB - Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I-V and L-I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications.

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Size dependence of III-nitride microdisk light-emitting diode characteristics

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