Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET

Mitchell Kelley, Bejoy N. Pushpakaran, Argenis Bilbao, James Schrock, Stephen Bayne

Research output: Contribution to journalArticle


The high-voltage silicon carbide MOSFET is a state-of-the-art solution for increasing power density and efficiency in power electronics; nonetheless, a full-scope of failure modes during extreme operating condition has not been established. Past efforts evaluated short-circuit capability of 10-kV silicon carbide MOSFET, however, in this manuscript, the single-pulse avalanche mode operation of a research-grade 10-kV/10-A silicon carbide MOSFET is explored for the first time. A decoupled unclamped inductive circuit was selected for evaluation, and avalanche energy was increased until catastrophic failure occurred. The maximum tolerable avalanche energy was measured to be 2.84J corresponding to an energy density of 8.8J·cm−2. This result was compared with 1.2-kV silicon carbide MOSFETs to evaluate device robustness. Post failure analysis included: estimation of junction temperature, scanning electron microscopy, and focused ion beam cut. Peak junction temperature of 1010°C was estimated
Original languageEnglish
Pages (from-to)174 - 180
JournalDefault journal
StatePublished - 2018

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