Epitaxial layers of ZnSnAs2 were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying the substrate temperature and the Sn, As, and Zn fluxes. The best morphology and stoichiometry was obtained at Ts= 300-320 °C and the flux ratio of PAs4 /pZn∼1.5-4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffraction, Raman spectroscopy, and atomic force microscopy. Single phase layers of ZnSnAs2 grown on InP(001) substrates show lattice mismatch of -3.4×10-4.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - May 1998|