Single phase ZnSnAs2 grown by molecular beam epitaxy

G. A. Seryogin; S. A. Nikishin; H. Temkin; R. Schlaf; L. I. Sharp; Y. C. Wen; B. Parkinson; V. A. Elyukhin; Yu A. Kudriavtsev; A. M. Mintairov; N. N. Faleev; M. V. Baidakova

Single phase ZnSnAs₂ grown by molecular beam epitaxy

G. A. Seryogin, S. A. Nikishin, H. Temkin, R. Schlaf, L. I. Sharp, Y. C. Wen, B. Parkinson, V. A. Elyukhin, Yu A. Kudriavtsev, A. M. Mintairov, N. N. Faleev, M. V. Baidakova

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Epitaxial layers of ZnSnAs₂ were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying the substrate temperature and the Sn, As, and Zn fluxes. The best morphology and stoichiometry was obtained at T_s= 300-320 °C and the flux ratio of P_As4 /p_Zn∼1.5-4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffraction, Raman spectroscopy, and atomic force microscopy. Single phase layers of ZnSnAs₂ grown on InP(001) substrates show lattice mismatch of -3.4×10^-4.

Original language	English
Pages (from-to)	1456-1458
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	3
State	Published - May 1998

Cite this

@article{e98584b7d16247fc8c38ac821d84fecb,

title = "Single phase ZnSnAs2 grown by molecular beam epitaxy",

abstract = "Epitaxial layers of ZnSnAs2 were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying the substrate temperature and the Sn, As, and Zn fluxes. The best morphology and stoichiometry was obtained at Ts= 300-320 °C and the flux ratio of PAs4 /pZn∼1.5-4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffraction, Raman spectroscopy, and atomic force microscopy. Single phase layers of ZnSnAs2 grown on InP(001) substrates show lattice mismatch of -3.4×10-4.",

author = "Seryogin, {G. A.} and Nikishin, {S. A.} and H. Temkin and R. Schlaf and Sharp, {L. I.} and Wen, {Y. C.} and B. Parkinson and Elyukhin, {V. A.} and Kudriavtsev, {Yu A.} and Mintairov, {A. M.} and Faleev, {N. N.} and Baidakova, {M. V.}",

year = "1998",

month = may,

language = "English",

volume = "16",

pages = "1456--1458",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "3",

}

TY - JOUR

T1 - Single phase ZnSnAs2 grown by molecular beam epitaxy

AU - Seryogin, G. A.

AU - Nikishin, S. A.

AU - Temkin, H.

AU - Schlaf, R.

AU - Sharp, L. I.

AU - Wen, Y. C.

AU - Parkinson, B.

AU - Elyukhin, V. A.

AU - Kudriavtsev, Yu A.

AU - Mintairov, A. M.

AU - Faleev, N. N.

AU - Baidakova, M. V.

PY - 1998/5

Y1 - 1998/5

N2 - Epitaxial layers of ZnSnAs2 were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying the substrate temperature and the Sn, As, and Zn fluxes. The best morphology and stoichiometry was obtained at Ts= 300-320 °C and the flux ratio of PAs4 /pZn∼1.5-4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffraction, Raman spectroscopy, and atomic force microscopy. Single phase layers of ZnSnAs2 grown on InP(001) substrates show lattice mismatch of -3.4×10-4.

AB - Epitaxial layers of ZnSnAs2 were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying the substrate temperature and the Sn, As, and Zn fluxes. The best morphology and stoichiometry was obtained at Ts= 300-320 °C and the flux ratio of PAs4 /pZn∼1.5-4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffraction, Raman spectroscopy, and atomic force microscopy. Single phase layers of ZnSnAs2 grown on InP(001) substrates show lattice mismatch of -3.4×10-4.

UR - http://www.scopus.com/inward/record.url?scp=0001393716&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001393716

SN - 1071-1023

VL - 16

SP - 1456

EP - 1458

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Single phase ZnSnAs₂ grown by molecular beam epitaxy

Abstract

Other files and links

Fingerprint

Cite this