We present the results of single phase Inx Ga1-x N alloys for the In composition ranging from 25% to 63% synthesized by metal organic chemical vapor deposition. Single peak of x-ray diffraction θ-2θ scans of the (002) plane in InGaN alloys confirms that there is no phase separation. It was found both electron mobility and concentration increase with an increase of In content. Atomic force microscopy measurements revealed that the grown films have a surface roughness that varies between 1.5 and 4.0 nm and are free from In droplets. The results suggest that it is possible to synthesize single phase InGaN alloys inside the theoretically predicted miscibility gap.