TY - JOUR
T1 - Single crystal growth of monoisotopic hexagonal boron nitride from a Fe-Cr flux
AU - Li, Jiahan
AU - Elias, Christine
AU - Ye, Gaihua
AU - Evans, Dylan
AU - Liu, Song
AU - He, Rui
AU - Cassabois, Guillaume
AU - Gil, Bernard
AU - Valvin, Pierre
AU - Liu, Bin
AU - Edgar, James H.
N1 - Funding Information:
Support from the Materials Engineering and Processing program of the National Science Foundation, Award Number CMMI 1538127, and the II–VI Foundation is greatly appreciated. Work at TTU is supported by NSF CAREER Grant No. DMR-1760668. This work was financially supported in France by the contract BONASPES (ANR-19-CE30-0007-02) under the umbrella of the publicly funded Investissements d’Avenir program managed by the French ANR agency.
Publisher Copyright:
© The Royal Society of Chemistry.
PY - 2020/8/7
Y1 - 2020/8/7
N2 - Hexagonal boron nitride (hBN) is an important insulator that is incorporated into numerous 2D electronic, optoelectronic, and photonic devices, whereas natural hBN is a mixture of 20% 10B and 80% 11B isotopes, and monoisotopic hBN is a variant with just a single boron isotope, either 10B or 11B. Consequently, monoisotopic hBN has a higher thermal conductivity and a stronger neutron absorption (in the case of h10BN), making it superior for neutron detectors, heat management materials in nano flexible electronic devices, and phonon polariton-based nanophotonics. Here we synthesized approximately monoisotopic hBN using boron powder containing a single boron isotope and nitrogen, and grew single crystals from a Fe-Cr metal flux at atmospheric pressure. Narrow Raman peaks from the shear (≤1.3 cm-1) and intralayer (≤3.3 cm-1) modes demonstrate that the crystals are highly ordered. In the photoluminescence spectra, the presence of phonon-assistant transition peaks is also indicative of the high-quality of the crystals. This growth protocol permits us to get rid of the emission at 4.1 eV. This work provides a novel material for studying the fundamental properties of isotopic effects and the high-performance hBN device.
AB - Hexagonal boron nitride (hBN) is an important insulator that is incorporated into numerous 2D electronic, optoelectronic, and photonic devices, whereas natural hBN is a mixture of 20% 10B and 80% 11B isotopes, and monoisotopic hBN is a variant with just a single boron isotope, either 10B or 11B. Consequently, monoisotopic hBN has a higher thermal conductivity and a stronger neutron absorption (in the case of h10BN), making it superior for neutron detectors, heat management materials in nano flexible electronic devices, and phonon polariton-based nanophotonics. Here we synthesized approximately monoisotopic hBN using boron powder containing a single boron isotope and nitrogen, and grew single crystals from a Fe-Cr metal flux at atmospheric pressure. Narrow Raman peaks from the shear (≤1.3 cm-1) and intralayer (≤3.3 cm-1) modes demonstrate that the crystals are highly ordered. In the photoluminescence spectra, the presence of phonon-assistant transition peaks is also indicative of the high-quality of the crystals. This growth protocol permits us to get rid of the emission at 4.1 eV. This work provides a novel material for studying the fundamental properties of isotopic effects and the high-performance hBN device.
UR - http://www.scopus.com/inward/record.url?scp=85089490490&partnerID=8YFLogxK
U2 - 10.1039/d0tc02143a
DO - 10.1039/d0tc02143a
M3 - Article
AN - SCOPUS:85089490490
VL - 8
SP - 9931
EP - 9935
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7534
IS - 29
ER -