Simulations of quantized inversion layer electron transport in 6H-Silicon carbide metal oxide semiconductor structures

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Abstract

Monte Carlo analysis of channel mobility in 6H-SiC metal oxide semiconductors is presented with inclusion of electron quantization. Our simulation results fit available experimental data very well. Interface roughness scattering is shown to play a strong role in determining channel mobility. A roughness parameter of 7.5 Å is extracted from reported data.

Original languageEnglish
Pages (from-to)2156-2158
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number17
DOIs
StatePublished - 1998

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