Simulations of quantized inversion layer electron transport in 6H-Silicon carbide metal oxide semiconductor structures

R. P. Joshi

doi:10.1063/1.121307

Simulations of quantized inversion layer electron transport in 6H-Silicon carbide metal oxide semiconductor structures

R. P. Joshi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Monte Carlo analysis of channel mobility in 6H-SiC metal oxide semiconductors is presented with inclusion of electron quantization. Our simulation results fit available experimental data very well. Interface roughness scattering is shown to play a strong role in determining channel mobility. A roughness parameter of 7.5 Å is extracted from reported data.

Original language	English
Pages (from-to)	2156-2158
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	17
DOIs	https://doi.org/10.1063/1.121307
State	Published - 1998

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10.1063/1.121307

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title = "Simulations of quantized inversion layer electron transport in 6H-Silicon carbide metal oxide semiconductor structures",

abstract = "Monte Carlo analysis of channel mobility in 6H-SiC metal oxide semiconductors is presented with inclusion of electron quantization. Our simulation results fit available experimental data very well. Interface roughness scattering is shown to play a strong role in determining channel mobility. A roughness parameter of 7.5 {\AA} is extracted from reported data.",

author = "Joshi, {R. P.}",

year = "1998",

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AU - Joshi, R. P.

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AB - Monte Carlo analysis of channel mobility in 6H-SiC metal oxide semiconductors is presented with inclusion of electron quantization. Our simulation results fit available experimental data very well. Interface roughness scattering is shown to play a strong role in determining channel mobility. A roughness parameter of 7.5 Å is extracted from reported data.

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M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Simulations of quantized inversion layer electron transport in 6H-Silicon carbide metal oxide semiconductor structures

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