Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses

R. P. Joshi, C. Fazi

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Numerical simulations of the transient response of reverse biased silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that deep-defects can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability.

Original languageEnglish
Pages (from-to)2162-2163
Number of pages2
JournalElectronics Letters
Volume33
Issue number25
DOIs
StatePublished - 1997

Keywords

  • Power semiconductor devices
  • Silicon carbide

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