Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses

R. P. Joshi; C. Fazi

doi:10.1049/el:19971462

Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses

R. P. Joshi, C. Fazi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Numerical simulations of the transient response of reverse biased silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that deep-defects can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability.

Original language	English
Pages (from-to)	2162-2163
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	25
DOIs	https://doi.org/10.1049/el:19971462
State	Published - 1997

Keywords

Power semiconductor devices
Silicon carbide

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10.1049/el:19971462

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title = "Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses",

abstract = "Numerical simulations of the transient response of reverse biased silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that deep-defects can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability.",

keywords = "Power semiconductor devices, Silicon carbide",

author = "Joshi, {R. P.} and C. Fazi",

year = "1997",

doi = "10.1049/el:19971462",

language = "English",

volume = "33",

pages = "2162--2163",

journal = "Electronics Letters",

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T1 - Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses

AU - Joshi, R. P.

AU - Fazi, C.

PY - 1997

Y1 - 1997

N2 - Numerical simulations of the transient response of reverse biased silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that deep-defects can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability.

AB - Numerical simulations of the transient response of reverse biased silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that deep-defects can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability.

KW - Power semiconductor devices

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=0031553317&partnerID=8YFLogxK

U2 - 10.1049/el:19971462

DO - 10.1049/el:19971462

M3 - Article

AN - SCOPUS:0031553317

SN - 0013-5194

VL - 33

SP - 2162

EP - 2163

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses

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Keywords

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