Simulations of charge transport across a grain boundary in n-silicon bicrystals

R. P. Joshi, R. F. Wood

Research output: Contribution to journalArticlepeer-review

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Abstract

Electron transport in Si low-angle bicrystals is analyzed by a novel Monte Carlo-molecular dynamics simulation scheme. The effect of discrete charges at the grain boundaries are studied and compared to results from one-dimensional treatments. The average grain boundary charge density strongly influences transport, and a field-dependent threshold effect is predicted. Details of the internal charge arrangement are shown to be relatively important at low fields and/or high grain boundary charge densities.

Original languageEnglish
Pages (from-to)5543-5545
Number of pages3
JournalJournal of Applied Physics
Volume83
Issue number10
DOIs
StatePublished - May 15 1998

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