Simulations of a high power 4H-SiC VJFET and its GaAs counterpart

Qiong Shui, Xianyue Gu, Charles W. Myles, Michael S. Mazzola, M. A. Gundersen

Research output: Contribution to conferencePaperpeer-review

6 Scopus citations

Abstract

In this paper, the 2-D simulator ATLAS is used to investigate and compare the voltage blocking capability, the current rating and the switching characteristics of VJFET's based on SiC and GaAs materials. As a part of this study, simulations and analysis of a normally-off 4H-SiC VJFET with 8kV blocking voltage are presented, along with similar results for its GaAs counterpart. This structure is optimized to achieve a high blocking voltage and a high current density. The goal of this work is to compare the performance of a SiC VJFET with that of a similar GaAs VJFET, and to provide guidelines for pulsed power applications.

Original languageEnglish
Pages123-126
Number of pages4
StatePublished - 2003
Event14th IEEE International Pulsed Power Conference - Dallas, TX, United States
Duration: Jun 15 2003Jun 18 2003

Conference

Conference14th IEEE International Pulsed Power Conference
Country/TerritoryUnited States
CityDallas, TX
Period06/15/0306/18/03

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