In this paper, the 2-D simulator ATLAS is used to investigate and compare the voltage blocking capability, the current rating and the switching characteristics of VJFET's based on SiC and GaAs materials. As a part of this study, simulations and analysis of a normally-off 4H-SiC VJFET with 8kV blocking voltage are presented, along with similar results for its GaAs counterpart. This structure is optimized to achieve a high blocking voltage and a high current density. The goal of this work is to compare the performance of a SiC VJFET with that of a similar GaAs VJFET, and to provide guidelines for pulsed power applications.
|Number of pages||4|
|State||Published - 2003|
|Event||14th IEEE International Pulsed Power Conference - Dallas, TX, United States|
Duration: Jun 15 2003 → Jun 18 2003
|Conference||14th IEEE International Pulsed Power Conference|
|Period||06/15/03 → 06/18/03|