Simulations for the transient response of graded AlxGa 1-xN submicron photodetectors

R. P. Joshi

doi:10.1063/1.357340

Simulations for the transient response of graded Al_xGa _1-xN submicron photodetectors

R. P. Joshi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We present Monte Carlo simulations for the dynamic response of a submicron linearly graded Al_xGa_1-xN metal-semiconductor-metal (MSM) structure, and compare it with a uniform GaN MSM device. Both electron and hole transport, as well as circuit elements are comprehensively included. Our results demonstrate enhancement in speed and frequency bandwidth. The improved response, despite additional alloy and multi-mode scattering, arises from the capability of rapid hole removal from the device. The 20% reduction in the turn-off time for a 0.25 μm device could, in principle, be further enhanced through the use of more complex nonuniform grading profiles.

Original language	English
Pages (from-to)	4434-4436
Number of pages	3
Journal	Journal of Applied Physics
Volume	76
Issue number	7
DOIs	https://doi.org/10.1063/1.357340
State	Published - 1994

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abstract = "We present Monte Carlo simulations for the dynamic response of a submicron linearly graded AlxGa1-xN metal-semiconductor-metal (MSM) structure, and compare it with a uniform GaN MSM device. Both electron and hole transport, as well as circuit elements are comprehensively included. Our results demonstrate enhancement in speed and frequency bandwidth. The improved response, despite additional alloy and multi-mode scattering, arises from the capability of rapid hole removal from the device. The 20% reduction in the turn-off time for a 0.25 μm device could, in principle, be further enhanced through the use of more complex nonuniform grading profiles.",

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AB - We present Monte Carlo simulations for the dynamic response of a submicron linearly graded AlxGa1-xN metal-semiconductor-metal (MSM) structure, and compare it with a uniform GaN MSM device. Both electron and hole transport, as well as circuit elements are comprehensively included. Our results demonstrate enhancement in speed and frequency bandwidth. The improved response, despite additional alloy and multi-mode scattering, arises from the capability of rapid hole removal from the device. The 20% reduction in the turn-off time for a 0.25 μm device could, in principle, be further enhanced through the use of more complex nonuniform grading profiles.

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Simulations for the transient response of graded Al_xGa _1-xN submicron photodetectors

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