Simulations for the dynamic response of single-transit SiC IMPATTs

R. P. Joshi, S. Pathak

Research output: Contribution to journalConference articlepeer-review

Abstract

We present simulation results for the dynamic characteristics of single-transit SiC IMPATT devices. An iterative Monte Carlo-Crank-Nicholson technique has been used to solve the coupled electron transport-heat conduction problem. Our results show that the internal power generation profile within the SiC IMPATT device can be very non-uniform. The internal heating is seen to degrade device efficiency, operating frequency, reduce the output current, and increase the transit time.

Original languageEnglish
Pages (from-to)102-105
Number of pages4
JournalConference Proceedings - IEEE SOUTHEASTCON
StatePublished - 1995
EventProceedings of the IEEE Southeastcon '95 Conference - Raleigh, NC, USA
Duration: Mar 26 1995Mar 29 1995

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