Abstract
We present simulation results for the dynamic characteristics of single-transit SiC IMPATT devices. An iterative Monte Carlo-Crank-Nicholson technique has been used to solve the coupled electron transport-heat conduction problem. Our results show that the internal power generation profile within the SiC IMPATT device can be very non-uniform. The internal heating is seen to degrade device efficiency, operating frequency, reduce the output current, and increase the transit time.
| Original language | English |
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| Pages (from-to) | 102-105 |
| Number of pages | 4 |
| Journal | Conference Proceedings - IEEE SOUTHEASTCON |
| State | Published - 1995 |
| Event | Proceedings of the IEEE Southeastcon '95 Conference - Raleigh, NC, USA Duration: Mar 26 1995 → Mar 29 1995 |