We present simulation results for the dynamic characteristics of single-transit SiC IMPATT devices. An iterative Monte Carlo-Crank-Nicholson technique has been used to solve the coupled electron transport-heat conduction problem. Our results show that the internal power generation profile within the SiC IMPATT device can be very non-uniform. The internal heating is seen to degrade device efficiency, operating frequency, reduce the output current, and increase the transit time.
|Number of pages||4|
|Journal||Conference Proceedings - IEEE SOUTHEASTCON|
|State||Published - 1995|
|Event||Proceedings of the IEEE Southeastcon '95 Conference - Raleigh, NC, USA|
Duration: Mar 26 1995 → Mar 29 1995