Simulations for improved heterostructure gunn oscillator based on transit region doping variations

R. Vaidyanathan; R. P. Joshi

doi:10.1049/el:19910975

Simulations for improved heterostructure gunn oscillator based on transit region doping variations

R. Vaidyanathan, R. P. Joshi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A selfconsistent ensemble Monte-Carlo procedure has been implemented within an oscillator circuit to investigate the performance of heterostructure Gunn diodes. The study includes comparisons between a conventional notch device and heterojunction oscillators having two different doping profiles. It is demonstrated that suitable tailoring of the doping concentrations within the active transit region can lead to improvements in the heterostructure performance. In particular, both the oscillator frequencies and power conversion efficiencies are enhanced, without compromising reductions in the dead zone.

Original language	English
Pages (from-to)	1555-1557
Number of pages	3
Journal	Electronics Letters
Volume	27
Issue number	17
DOIs	https://doi.org/10.1049/el:19910975
State	Published - May 9 1991

Keywords

Diodes
Oscillators
Semiconductor devices and materials
Simulation

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