Abstract
A selfconsistent ensemble Monte-Carlo procedure has been implemented within an oscillator circuit to investigate the performance of heterostructure Gunn diodes. The study includes comparisons between a conventional notch device and heterojunction oscillators having two different doping profiles. It is demonstrated that suitable tailoring of the doping concentrations within the active transit region can lead to improvements in the heterostructure performance. In particular, both the oscillator frequencies and power conversion efficiencies are enhanced, without compromising reductions in the dead zone.
| Original language | English |
|---|---|
| Pages (from-to) | 1555-1557 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 27 |
| Issue number | 17 |
| DOIs | |
| State | Published - May 9 1991 |
Keywords
- Diodes
- Oscillators
- Semiconductor devices and materials
- Simulation