Simulations for improved heterostructure gunn oscillator based on transit region doping variations

R. Vaidyanathan, R. P. Joshi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A selfconsistent ensemble Monte-Carlo procedure has been implemented within an oscillator circuit to investigate the performance of heterostructure Gunn diodes. The study includes comparisons between a conventional notch device and heterojunction oscillators having two different doping profiles. It is demonstrated that suitable tailoring of the doping concentrations within the active transit region can lead to improvements in the heterostructure performance. In particular, both the oscillator frequencies and power conversion efficiencies are enhanced, without compromising reductions in the dead zone.

Original languageEnglish
Pages (from-to)1555-1557
Number of pages3
JournalElectronics Letters
Volume27
Issue number17
DOIs
StatePublished - May 9 1991

Keywords

  • Diodes
  • Oscillators
  • Semiconductor devices and materials
  • Simulation

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