Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs

Aderinto Ogunniyi, James Schrock, Miguel Hinojosa, Heather O’Brien, Aivars J Lelis, Stephen Bayne, Sei Hyung Ryu

Research output: Contribution to conferencePaper

Original languageEnglish
StatePublished - 2017

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    Ogunniyi, A., Schrock, J., Hinojosa, M., O’Brien, H., Lelis, A. J., Bayne, S., & Ryu, S. H. (2017). Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs.