| Original language | English |
|---|---|
| State | Published - 2017 |
Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs
Aderinto Ogunniyi, James Schrock, Miguel Hinojosa, Heather O’Brien, Aivars J Lelis, Stephen Bayne, Sei Hyung Ryu
Research output: Contribution to conference › Paper