Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs

Aderinto Ogunniyi, James Schrock, Miguel Hinojosa, Heather O’Brien, Aivars Lelis, Stephen Bayne, Sei Hyung Ryu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determined by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2016
EditorsKonstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
PublisherTrans Tech Publications Ltd
Pages575-578
Number of pages4
ISBN (Print)9783035710434
DOIs
StatePublished - 2017
Event11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece
Duration: Sep 25 2016Sep 29 2016

Publication series

NameMaterials Science Forum
Volume897 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
CountryGreece
CityHalkidiki
Period09/25/1609/29/16

Keywords

  • Ambipolar lifetime
  • Gate current
  • Gate turn-off thyristor
  • Silicon carbide
  • Turn-on delay

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