Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs

Aderinto Ogunniyi; James Schrock; Miguel Hinojosa; Heather O’Brien; Aivars Lelis; Stephen Bayne; Sei Hyung Ryu

doi:10.4028/www.scientific.net/MSF.897.575

Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs

Aderinto Ogunniyi, James Schrock, Miguel Hinojosa, Heather O’Brien, Aivars Lelis, Stephen Bayne, Sei Hyung Ryu

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determined by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2016
Editors	Konstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
Publisher	Trans Tech Publications Ltd
Pages	575-578
Number of pages	4
ISBN (Print)	9783035710434
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.897.575
State	Published - 2017
Event	11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece Duration: Sep 25 2016 → Sep 29 2016

Publication series

Name	Materials Science Forum
Volume	897 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
Country/Territory	Greece
City	Halkidiki
Period	09/25/16 → 09/29/16

Keywords

Ambipolar lifetime
Gate current
Gate turn-off thyristor
Silicon carbide
Turn-on delay

Access to Document

10.4028/www.scientific.net/MSF.897.575

Cite this

Ogunniyi, A., Schrock, J., Hinojosa, M., O’Brien, H., Lelis, A., Bayne, S., & Ryu, S. H. (2017). Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs. In K. Zekentes, K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Silicon Carbide and Related Materials 2016 (pp. 575-578). (Materials Science Forum; Vol. 897 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.897.575

Ogunniyi, Aderinto ; Schrock, James ; Hinojosa, Miguel et al. / Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs. Silicon Carbide and Related Materials 2016. editor / Konstantinos Zekentes ; Konstantinos Zekentes ; Konstantin V. Vasilevskiy ; Nikolaos Frangis. Trans Tech Publications Ltd, 2017. pp. 575-578 (Materials Science Forum).

@inproceedings{20d20ee128ec4c3fb6eda1137beca4fe,

title = "Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs",

abstract = "The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determined by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.",

keywords = "Ambipolar lifetime, Gate current, Gate turn-off thyristor, Silicon carbide, Turn-on delay",

author = "Aderinto Ogunniyi and James Schrock and Miguel Hinojosa and Heather O{\textquoteright}Brien and Aivars Lelis and Stephen Bayne and Ryu, {Sei Hyung}",

note = "Publisher Copyright: {\textcopyright} 2017 Trans Tech Publications, Switzerland.; 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 ; Conference date: 25-09-2016 Through 29-09-2016",

year = "2017",

doi = "10.4028/www.scientific.net/MSF.897.575",

language = "English",

isbn = "9783035710434",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "575--578",

editor = "Konstantinos Zekentes and Konstantinos Zekentes and Vasilevskiy, {Konstantin V.} and Nikolaos Frangis",

booktitle = "Silicon Carbide and Related Materials 2016",

}

Ogunniyi, A, Schrock, J, Hinojosa, M, O’Brien, H, Lelis, A, Bayne, S & Ryu, SH 2017, Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs. in K Zekentes, K Zekentes, KV Vasilevskiy & N Frangis (eds), Silicon Carbide and Related Materials 2016. Materials Science Forum, vol. 897 MSF, Trans Tech Publications Ltd, pp. 575-578, 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 09/25/16. https://doi.org/10.4028/www.scientific.net/MSF.897.575

Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs. / Ogunniyi, Aderinto; Schrock, James; Hinojosa, Miguel et al.
Silicon Carbide and Related Materials 2016. ed. / Konstantinos Zekentes; Konstantinos Zekentes; Konstantin V. Vasilevskiy; Nikolaos Frangis. Trans Tech Publications Ltd, 2017. p. 575-578 (Materials Science Forum; Vol. 897 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs

AU - Ogunniyi, Aderinto

AU - Schrock, James

AU - Hinojosa, Miguel

AU - O’Brien, Heather

AU - Lelis, Aivars

AU - Bayne, Stephen

AU - Ryu, Sei Hyung

PY - 2017

Y1 - 2017

N2 - The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determined by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.

AB - The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determined by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.

KW - Ambipolar lifetime

KW - Gate current

KW - Gate turn-off thyristor

KW - Silicon carbide

KW - Turn-on delay

UR - http://www.scopus.com/inward/record.url?scp=85020044499&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.897.575

DO - 10.4028/www.scientific.net/MSF.897.575

M3 - Conference contribution

AN - SCOPUS:85020044499

SN - 9783035710434

T3 - Materials Science Forum

SP - 575

EP - 578

BT - Silicon Carbide and Related Materials 2016

A2 - Zekentes, Konstantinos

A2 - Vasilevskiy, Konstantin V.

A2 - Frangis, Nikolaos

PB - Trans Tech Publications Ltd

T2 - 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

Y2 - 25 September 2016 through 29 September 2016

ER -

Ogunniyi A, Schrock J, Hinojosa M, O’Brien H, Lelis A, Bayne S et al. Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs. In Zekentes K, Zekentes K, Vasilevskiy KV, Frangis N, editors, Silicon Carbide and Related Materials 2016. Trans Tech Publications Ltd. 2017. p. 575-578. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.897.575

Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this