Abstract
The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 "cap layer" above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using "field plates" in concert with high-k oxides.
Original language | English |
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Article number | 017103 |
Journal | AIP Advances |
Volume | 5 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2015 |