Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

Deepthi Nagulapally; Ravi P. Joshi; Aswini Pradhan

doi:10.1063/1.4905702

Simulation study of HEMT structures with HfO₂ cap layer for mitigating inverse piezoelectric effect related device failures

Deepthi Nagulapally, Ravi P. Joshi, Aswini Pradhan

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO₂ "cap layer" above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using "field plates" in concert with high-k oxides.

Original language	English
Article number	017103
Journal	AIP Advances
Volume	5
Issue number	1
DOIs	https://doi.org/10.1063/1.4905702
State	Published - Jan 1 2015

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Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

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Simulation study of HEMT structures with HfO₂ cap layer for mitigating inverse piezoelectric effect related device failures